Cd-free buffer layer materials on Cu 2ZnSn(S xSe 1-x) 4: Band alignments with ZnO, ZnS, and In 2S 3

Applied Physics Letters

Volumn 100, Issue 19, 2012, Pages

  Barkhouse, D Aaron R ^a   Haight, Richard ^a   Sakai, Noriyuki ^b   Hiroi, Homare ^b   Sugimoto, Hiroki ^b   Mitzi, David B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Solar Frontier KK   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BANDBENDING; CD-FREE; CD-FREE BUFFER LAYER; CHEMICAL BATH; CONDUCTION BAND OFFSET; DEVICE PROPERTIES; FEMTOSECONDS; LEVEL LOCATION; PHOTOVOLTAGE SPECTROSCOPY; POWER CONVERSION EFFICIENCIES; ULTRAVIOLET PHOTOEMISSION; ZNO;

BUFFER LAYERS; CONVERSION EFFICIENCY; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); ZINC OXIDE; ZINC SULFIDE;

HETEROJUNCTIONS;

EID: 84862105886     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4714737     Document Type: Article

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