The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Xu, Hanni ^a   Xia, Yidong ^a   Yin, Kuibo ^b   Lu, Jianxin ^a   Yin, Qiaonan ^a   Yin, Jiang ^a   Sun, Litao ^b   Liu, Zhiguo ^a  

^a NANJING UNIVERSITY   (China)

^b Southeast University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84873618484     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep01230     Document Type: Article

References (27)

1. Maloberti, F.&Gang, C. Performing arithmetic functionswith the Chinese abacus approach. IEEE Transactions on Circuits and Systems 46, 1512-1515 (1999).
2. Cowlishaw, M. F. Decimal floating-point: algorism for computers. Proceedings of the 16th IEEE Symposium on Computer Arithmetic, Santiago de Compostela 104-111 (2003).
3. Backus, J. Can programming be liberated from the von Neumann Style? A functional style and its algebra of programs. Commun. ACM 21, 613-641 (1978).
4. Buonomano, D. V. & Maass, W. State-dependent computations: spatiotemporal processing in cortical networks. Nature Reviews Neuroscience 10, 113-125 (2009).
5. Alibart, F. et al. An Organic Nanoparticle transistor behaving as a biological spiking synapse. Adv. Funct. Mater. 20, 330-337 (2010).
6. Jo, S. H. et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett 10, 1297-1301 (2010).
7. Chang, T., Jo, S. H. & Lu, W. Short-term memory to long-term memory transition in a nanoscale memristor. ACS Nano 5, 7669-7676 (2011).
8. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80-83 (2008).
9. Di Ventra, M., Pershin, Y. V. & Chua, L. O. Circuit elements with memory: Memristors, memcapacitors, and meminductors. Proc. IEEE 97, 1717-1724 (2009).
10. Hasegawa, T. et al. Learning abilities achieved by a single solid-state atomic switch. Adv. Mater. 22,1-4 (2010).
11. Pershin, Y. V., La Fontaine, S. & Di Ventra, M. Memristive model of amoeba learning. Phys. Rev. E 80, 021926 (2009).
12. Li, H. T. et al. Memristive behaviors of LiNbO3 ferroelectric diodes. Appl. Phys. Lett. 97, 012902 (2010).
13. Ohno, T. et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nature Mater. 10, 591-595 (2011).
14. Kuzum, D., Jeyasingh, R. G. D., Lee, B. & Wong, H.-S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 12, 2179-2186 (2012).
15. Wright, C. D., Liu, Y. Kohary, K. I., Aziz, M. M. & Hicken, R. J. Arithmetic and biologically-inspired computing using phase-change materials. Adv. Mater. 23, 3408-3413 (2011).
16. Kwon, D.-H. et al.Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotechnology 5, 148-153 (2010).
17. Strachan, J. P. et al. Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573-3577 (2010).
18. Chen, L. et al. Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films. Appl. Phys. Lett. 94, 162112 (2009).
19. Chen, L. et al. Monte Carlo simulation of the percolation in Ag30Ge17Se53 amorphous electrolyte films. Appl. Phys. Lett. 95, 242106 (2009).
20. Liu, Q. et al. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM. Adv. Mater. 24, 1844-1849 (2012).
21. Yang, Y. C. et al.Observation of conducting filament growth in nanoscale resistive memories. Nature Communications 3, 732 (2012).
22. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nature Mater. 6, 833-840 (2007).
23. Guo, X., Schindler, C., Menzel, S. & Waser R. Understanding the switching-off mechanism in Ag1 migration based resistively switching model systems. Appl. Phys. Lett. 91, 133513 (2007).
24. Mitkova, M.,Wang, Y. & Boolchand, P. Dual chemical role of Ag as an additive in chalcogenide glasses. Phys. Rev. Lett. 83, 3848-3851 (1999).
25. Porter, D. A. & Easterling, K. E. Phase Transformations inMetals and Alloys. (2nd Edition) Champman & Hall, London 1992.
26. Ferhat, M. & Nagao, J. Thermoelectric and transport properties of b-Ag2Se compounds. J. Appl. Phys. 88, 813-816 (2000).
27. Nagarajan, L. et al. A chemically driven insulator-metal transition in nonstoichiometric and amorphous gallium oxide. Nature Mater. 7, 391-398 (2008).