Molecular beam epitaxial growth and characterization of ZnSe on (001) ZnSe substrates and its application in light-emitting diodes

Semiconductor Science and Technology

Volumn 11, Issue 1, 1996, Pages 107-115

  Wenisch, H ^a,b   Schull K ^a   Hommel, D ^a,b   Landwehr, G ^a   Siehe, D ^c   Hartmann, H ^c  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; ETCHING; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; X RAY DIFFRACTION;

CHEMICAL ETCHING; HOMOEPITAXIAL GROWTH; THERMAL ETCHING; WET ETCHING; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0029755671     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/1/023     Document Type: Article

References (37)

1. Haase M A, Qiu J, DePuydt J M and Cheng H 1991 Appl. Phys. Lett. 59 1272
2. Jeon H, Ding J, Patterson W, Nurmikko A V, Xie W, Grillo D C, Kobayashi M and Gunshor R L 1991 Appl. Phys. Lett. 59 3619
3. Guha S, Munekata H and Chang L L 1993 J. Appl. Phys. 73 2294
4. Ohtsuka T and Hone K 1993 Japan. J. Appl. Phys. 32 L233
5. Einfeldt S, Behringer M, Nürnberger J, Heinke H, Behr T, Becker C R, Hommel D and Landwehr G 1995 Phys. Status Solidi b 187 439
6. Nakayama N, Itoh S, Ohata T, Nakano K, Okuyama H, Ozawa M, Ishibashi A, Ikeda M and Mon Y 1993 Electron. Lett. 29 1488
7. Landwehr G and Hommel D 1995 Phys. Status Solidi b 187 269
8. Gaines J M, Drenten R R, Haberern K W, Marshall T, Mensz P and Petruzzello J 1993 Appl. Phys. Lett. 62 2462
9. Salokatve A, Jeon H, Ding J, Hovinen M, Nurmikko A V, Grille D C, He L, Han J, Fan Y, Ringle M, Gunshor R L, Hua G C and Otsuka N 1993 Electron. Lett. 29 2192
10. Ohata T, Itoh S, Nakayama N, Matsumoto S, Nakano K, Ozawa M, Okuyama H, Tomiya S, Ikeda M and Ishibashi A 1995 Phys. Status Solidi b 187 279
11. Guha S, DePuydt J M, Haase M A, Qiu J and Cheng H 1993 Appl. Phys. Lett. 63 3107
12. Möller M O, Beyersdorfer V, Hommel D, Behr T, Heinke H, Lippmann T and Landwehr G 1994 J. Cryst. Growth 143 162
13. Kley A and Neugebauer J 1994 Phys. Rev. B 50 8616
14. Takatani S, Kikawa T and Nakazawa M 1992 Phys. Rev. B 45 8498
15. Ohishi M, Ohmori K, Fujii Y and Saito H 1988 J. Cryst. Growth 86 324
16. Menda K, Minato T and Kawashima M 1989 Japon. J. Appl. Phys. 28 1560
17. Ohkawa K, Karasawa T, Yoshida A, Hirao T and Mitsuyu T 1989 Appl. Phys. Lett. 54 2553
18. Park R M, Rouleau C M, Troffer M B, Koyama T and Yodo T 1990 J. Mater. Res. 5 475
19. Ren J, Eason D B, Yu Z, Sneed B, Cook J W Jr, Schetzina J F, El-Masry N A, Yang X H, Song J J, Cantwell G and Harsh W C 1994 J. Vac. Sci. Technol. B 12 1262
20. Harsch W C, Cantwell G and Schetzina J F 1995 Phys. Status Solidi b 187 467
21. Yu Z, Boney C, Hughes W C, Rowland W H Jr, Cook J W Jr, Schetzina J F, Cantwell G and Harsch W C 1995 Electron. Lett. 31 1341
22. Böttcher K and Hartmann H 1995 J. Cryst. Growth 146 53
23. Ueda K, Koyama T, Yamashita K, Kumata K, Takayama N and Hashimoto H 1988 Extended Abstracts of the 49th Autumn Meeting of the Japan Society of Applied Physics 6p-X-12 (Japan Society of Applied Physics, Tokyo) p 274
24. Kim Y D, Cooper S L, Klein M V and Jonker B T 1993 Appl. Phys. Lett. 62 2387
25. Heinke H, Möller M O, Hommel D and Landwehr G 1994 J. Cryst. Growth 135 41
26. Kressel H and Butler J K 1977 Semiconductor Lasers and Heterojunction LEDs (Orlando, FL: Academic)
27. Dunn C G and Koch E F 1957 Acta Metall, 1 548
28. Hishida Y, Toda T, Yoshie T, Yagi K, Yamaguchi T and Niina T 1994 Appl. Phys. Lett. 64 3419
29. Yao T, Zhu Z Q, Uesugi K, Kamiyama S and Fujimoto M 1990 J. Vac. Sci. Technol. A 8 997
30. Akinaga H and Tanaka K 1994 Appl. Surf. Sci. 82-83 298
31. Wenisch H, Schüll K, Behr T, Hommel D, Landwehr G, Siehe D, Rudolph P and Hartmann H 1996 J. Cryst. Growth at press
32. Ohkawa K, Ueno A and Mitsuyu T 1991 Japan. J. Appl. Phys. 30 3873
33. For a review on the optical properties of ZnSe epilayers see, Gutowski J, Presser N and Kudiek G 1990 Phys. Status Solidi a 120 11
34. Kurtz E, Einfeldt S, Nürnberger J, Zerlauth S, Hommel D and Landwehr G 1995 Phys. Status Solidi b 187 393
35. Xie W, Grillo D C, Gunshor R L, Kobayashi M, Jeon H, Ding J, Nurmikko A V, Hua G C and Otsuka N 1992 Appl. Phys. Lett. 60 1999
36. Rennie J, Onomura M, Nishikawa Y, Saito S, Parbrook P J, Nitta K, Ishikawa M and Hatakoshi G 1994 Electron. Lett. 30 1090
37. Hilsum H (ed) 1993 Handbook on Semiconductors, vol 4: Device Physics (Amsterdam: North-Holland)