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Volumn 59, Issue 12, 2012, Pages 908-912

A 4R/2W register file design for UDVS microprocessors in 65-nm CMOS

Author keywords

Register file design; subthreshold design; ultra wide dynamic voltage scaling (UDVS)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY EFFICIENCY; VOLTAGE SCALING;

EID: 84873405491     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2012.2231031     Document Type: Article
Times cited : (13)

References (16)
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  • 10
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    • A 256 kb 65 nm subthreshold SRAM design for ultra-low-voltage operation
    • Mar
    • B. H. Calhoun and A. Chandrakasan, "A 256 kb 65 nm subthreshold SRAM design for ultra-low-voltage operation," IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 680-688, Mar. 2007.
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    • A reconfigurable 8T ultra-dynamic voltage scalable (U-DVS) SRAM in 65 nm CMOS
    • Nov
    • M. E. Sinangil, N. Verma, and A. P. Chandrakasan, "A reconfigurable 8T ultra-dynamic voltage scalable (U-DVS) SRAM in 65 nm CMOS," IEEE J. Solid-State Circuits, vol. 44, no. 11, pp. 3163-3173, Nov. 2009.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.