Size- and orientation-selective si nanowire growth: Thermokinetic effects of nanoscale plasma chemistry

Journal of the American Chemical Society

Volumn 135, Issue 5, 2013, Pages 1912-1918

  Mehdipour, Hamid ^a,b   Ostrikov, Kostya ^a  

^a CSIRO   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH DIRECTIONS; GROWTH ORIENTATIONS; MULTISCALES; NANO SCALE; NANO-DEVICES; NANOELECTRONIC DEVICES; PLASMA CHEMISTRIES; PROCESS TEMPERATURE; SI NANOWIRE; THERMAL CHEMICAL VAPOR DEPOSITION; THERMO-KINETIC MODELS;

CHEMICAL VAPOR DEPOSITION; CHEMISTRY; NANOTECHNOLOGY; NANOWIRES;

SILICON;

NANOPARTICLE; NANOWIRE; SILICON;

ARTICLE; CRYSTAL STRUCTURE; MOLECULAR ELECTRONICS; NANOANALYSIS; NANODEVICE; NANOSCALE PLASMA CHEMISTRY; PRESSURE; TEMPERATURE; THERMODYNAMICS; VAPOR;

KINETICS; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; SILICON; TEMPERATURE;

EID: 84873388478     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja3110279     Document Type: Article

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