Using BCl3-based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

IEEE Photonics Technology Letters

Volumn 25, Issue 4, 2013, Pages 371-373

  Lin, Bo Wen ^a   Niu, Chen Yi ^a   Hsieh, Cheng Yu ^a   Wang, Bau Ming ^a   Hsu, Wen Ching ^b   Lin, Ray Ming ^c   Wu, Yew Chung Sermon ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Sino American Silicon Productions Inc   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

BCl 3; light emitting diode (LED); pattern; sapphire

Indexed keywords

BCL}3; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; PATTERN; PATTERN SAPPHIRE; ZINC-BLENDE;

GALLIUM ALLOYS; GALLIUM NITRIDE; SAPPHIRE; SUBSTRATES; WET ETCHING; ZINC SULFIDE;

LIGHT EMITTING DIODES;

EID: 84873298706     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2013.2238226     Document Type: Article

References (13)

1. D. S. Wuu, et al., "Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes," J. Electrochem. Soc., vol. 153, no. 8, pp. G765-G770, 2006. (Pubitemid 43958782)
2. J. H. Lee, J. T. Oh, Y. C. Kim, and J. H. Lee, "Stress reduction and enhanced extraction efficiency of GaN-based led grown on coneshape-patterned sapphire," IEEE Photon. Technol. Lett., vol. 20, no. 18, pp. 1563-1565, Sep. 15, 2008.
3. C. H. Chiu, et al., "Nanoscale epitaxial lateral overgrowth of GaNbased light-emitting diodes on a SiO2 nanorod-array patterned sapphire template," Appl. Phys. Lett., vol. 93, no. 8, pp. 081108-1-081108-3, Aug. 2008.
4. H. C. Lin, R. S. Lin, J. I. Chyi, and C. M. Lee, "Light output enhancement of InGaN light-emitting diodes grown on masklessly etched sapphire substrates," IEEE Photon. Technol. Lett., vol. 20, no. 19, pp. 1621-1623, Oct. 1, 2008.
5. J. Cheng, Y. S. Wu, W. Liao, and B. Lin, "Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire," Appl. Phys. Lett., vol. 96, no. 5, pp. 051109-1-051109-3, Feb. 2010.
6. Y.-C. Chen, F.-C. Hsiao, B.-W. Lin, B.-M. Wang, Y. S. Wu, and W.-C. Hsu "The formation and the plane indices of etched facets of wet etching patterned sapphire substrate," J. Electrochem. Soc., vol. 159, no. 6, pp. D362-D366, 2012.
7. J. H. Lee, et al., "Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire," Phys. Status Solidi (c), vol. 3, no. 6, pp. 2169-2173, 2006.
8. C.-C. Pan, C.-H. Hsieh, C.-W. Lin, and J.-I. Chyi, "Light output improvement of InGaN ultraviolet light-emitting diodes by using wetetched stripe-patterned sapphire substrates," J. Appl. Phys., vol. 102, no. 8, pp. 084503-1-084503-2, 2007.
9. K.-C. Shen, D.-S.Wuu, C.-C. Shen, S.-L. Ou, and R.-H. Horng, "Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance," J. Electrochem. Soc., vol. 158, no. 10, pp. H988-H993, 2011.
10. F. Dwikusuma, D. Saulys, and T. F. Kuech, "Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments," J. Electrochem. Soc., vol. 149, no. 11, pp. G603-G608, 2002. (Pubitemid 35457975)
11. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, "Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro-and nanoscale," J. Appl. Phys., vol. 103, no. 1, pp. 014314-1-014314-2, 2008.
12. C. H. Jeong, D. W. Kim, K. N. Kim, and G. Y. Yeom, "A study of sapphire etching characteristics using BCl3-based inductively coupled plasmas," Jpn. J. Appl. Phys., vol. 41, no. 10, pp. 6206-6208, 2002
13. P. W. Leech, "Reactive ion etching of piezoelectric materials in CF4/CHF3 plasmas," J. Vac. Sci. Technol. A, Vac., Surf., Films, vol. 16, no. 4, pp. 2037-2041, 1998.