Dry Etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack

Microelectronic Engineering

Volumn 105, Issue , 2013, Pages 60-64

  Paraschiv, V ^a   Boullart, W ^a   Altamirano Sanchez E ^a  

^a IMEC   (Belgium)

Author keywords

Dry etching; HBr; Mo; MoOx; MoOxNy; TiN Mo

Indexed keywords

65-NM NODE; DEVICE-SCALING; GATE STACKS; HBR; ISOTROPIC ETCHING; METAL GATE; METAL GATE STACK; MOOX; MOOXNY; PATTERN DEFINITION; SIDE WALLS; TIN LAYERS;

AMORPHOUS CARBON; DRY ETCHING; LOGIC GATES; MOLYBDENUM OXIDE; POLYSILICON; TITANIUM NITRIDE;

MOLYBDENUM;

EID: 84873281819     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.11.016     Document Type: Article

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