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Volumn B, Issue , 2003, Pages 1135-1138

An early deposited lpcvd silicon nitride: Allowing the possibility of novel cell designs

Author keywords

[No Author keywords available]

Indexed keywords

CELL DESIGN; HIGH TEMPERATURE ANNEAL; INCIDENT LIGHT; OXIDE GROWTH;

EID: 6444223144     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (8)
  • 2
    • 0020721235 scopus 로고
    • Post-deposition high temperature processing of silicon nitride
    • H.J. Stein, P.S. Peercy and R.J. Sokel "Post-deposition high temperature processing of silicon nitride", Thin Solid Films 101:291, (1983)
    • (1983) Thin Solid Films , vol.101 , pp. 291
    • Stein, H.J.1    Peercy, P.S.2    Sokel, R.J.3
  • 3
    • 6444221486 scopus 로고    scopus 로고
    • Oxide / LPCVD nitride stacks on silicon: The effects of high temperature treatments on bulk lifetime and on surface passivation
    • Munich
    • M.J. McCann, K.J. Weber, M.J. Stocks and A.W. Blakers Oxide / LPCVD Nitride Stacks on Silicon: The Effects of High Temperature Treatments on Bulk Lifetime and on Surface Passivation. 17th EC PV Conference, Munich, 1708-1711(2001).
    • (2001) 17th EC PV Conference , pp. 1708-1711
    • McCann, M.J.1    Weber, K.J.2    Stocks, M.J.3    Blakers, A.W.4
  • 4
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photo-conductance data
    • R.A. Sinton and A. Cuevas "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photo-conductance data" Applied Physics Letters, 69 (17):2510, (1996).
    • (1996) Applied Physics Letters , vol.69 , Issue.17 , pp. 2510
    • Sinton, R.A.1    Cuevas, A.2
  • 5
    • 0000612857 scopus 로고    scopus 로고
    • Generalised analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
    • H. Nagel, C. Berge and A.G. Aberle "Generalised analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors", Journal of Applied Physics 86(11):6218, (1999).
    • (1999) Journal of Applied Physics , vol.86 , Issue.11 , pp. 6218
    • Nagel, H.1    Berge, C.2    Aberle, A.G.3
  • 7
    • 0342882187 scopus 로고
    • Stability of hydrogen in silicon nitride films deposited by low-pressure and plasma enhanced chemical vapour deposition techniques
    • Joseph Z. Xie, Shyam P. Murarka, Xin S. Guo and William A. Landord "Stability of hydrogen in silicon nitride films deposited by low-pressure and plasma enhanced chemical vapour deposition techniques" Journal of Vacuum Science and Technology B 7(2) (1989)
    • (1989) Journal of Vacuum Science and Technology B , vol.7 , Issue.2
    • Xie, J.Z.1    Murarka, S.P.2    Guo, X.S.3    Landord, W.A.4
  • 8
    • 0017506253 scopus 로고
    • Chemically bound hydrogen in CVD Si3N4: Dependence on NH3/SiH4 ration and on annealing
    • H.J. Stein and H.A.R. Wegener "Chemically bound hydrogen in CVD Si3N4: Dependence on NH3/SiH4 ration and on annealing", Solid State Science and Technology, 124(6) (1977)
    • (1977) Solid State Science and Technology , vol.124 , Issue.6
    • Stein, H.J.1    Wegener, H.A.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.