New results on the bound exciton luminescence in germanium

Solid State Phenomena

Volumn 178-179, Issue , 2011, Pages 289-294

  Allardt, M ^a   Kolkovsky, V L ^a   Kolodinski, S ^a   Abrosimov, N V ^b   Irmscher, K ^b   Clauws, P ^c   Weber, J ^a   Zuber, K ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Leibniz Institut F Ür Kristallzüchtung   (Germany)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

Bound excitons; Germanium; Haynes rule; Luminescence

Indexed keywords

ALUMINUM; DEFECTS; DOPING (ADDITIVES); GERMANIUM; LUMINESCENCE; PHOSPHORUS; SEMICONDUCTOR DEVICE MANUFACTURE;

BOUND EXCITON; DISSOCIATION ENERGIES; HAYNES RULE; NEW RESULTS; SHALLOW DONORS;

EXCITONS;

EID: 80053274130     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.178-179.289     Document Type: Conference Paper

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