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Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 3, 2010, Pages

Low-temperature irradiation-induced defects in p -type germanium

(4) Kolkovsky, Vl a Petersen, M Christian b Mesli, A c Larsen, A Nylandsted b

a DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

b AARHUS UNIVERSITY (Denmark)

c UNIVERSITÉ DE STRASBOURG (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954828657 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.81.035208 Document Type: Article

Times cited : (4)

References (18)

1
- 54549083384
- 10.1103/PhysRevB.78.165202
- A. Mesli, L. Dobaczewski, K. B. Nielsen, Vl. Kolkovsky, M. C. Petersen, and A. N. Larsen, Phys. Rev. B 78, 165202 (2008). 10.1103/PhysRevB.78.165202
- (2008) Phys. Rev. B , vol.78 , pp. 165202
- Mesli, A.¹ Dobaczewski, L.² Nielsen, K.B.³ Kolkovsky, Vl.⁴ Petersen, M.C.⁵ Larsen, A.N.⁶

2
- 58149239894
- 10.1103/PhysRevB.78.233201
- Vl. Kolkovsky, M. C. Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. N. Larsen, Phys. Rev. B 78, 233201 (2008). 10.1103/PhysRevB.78.233201
- (2008) Phys. Rev. B , vol.78 , pp. 233201
- Kolkovsky, Vl.¹ Petersen, M.C.² Mesli, A.³ Van Gheluwe, J.⁴ Clauws, P.⁵ Larsen, A.N.⁶

3
- 28344446382
- 10.1063/1.2112168
- C. E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted Larsen, Appl. Phys. Lett. 87, 172103 (2005). 10.1063/1.2112168
- (2005) Appl. Phys. Lett. , vol.87 , pp. 172103
- Lindberg, C.E.¹ Lundsgaard Hansen, J.² Bomholt, P.³ Mesli, A.⁴ Bonde Nielsen, K.⁵ Nylandsted Larsen, A.⁶

4
- 77954829346
- Vl. Kolkovsky, M. Christian Petersen, A. Nylandsted Larsen, and A. Mesli, Mater. Sci. Semicond. Process. 404, 5080 (2009).
- (2009) Mater. Sci. Semicond. Process. , vol.404 , pp. 5080
- Kolkovsky, Vl.¹ Christian Petersen, M.² Nylandsted Larsen, A.³ Mesli, A.⁴

5
- 0004052502
- Academic, London
- P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1992), p. 492.
- (1992) The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , pp. 492
- Blood, P.¹ Orton, J.W.²

6
- 0000832861
- 10.1103/PhysRevB.61.10361
- S. D. Ganichev, E. Ziemann, I. N. Yassievich, W. Prettl, A. A. Istratov, and E. R. Weber, Phys. Rev. B 61, 10361 (2000). 10.1103/PhysRevB.61.10361
- (2000) Phys. Rev. B , vol.61 , pp. 10361
- Ganichev, S.D.¹ Ziemann, E.² Yassievich, I.N.³ Prettl, W.⁴ Istratov, A.A.⁵ Weber, E.R.⁶

7
- 26344462977
- 10.1103/PhysRev.54.647
- J. Frenkel, Phys. Rev. 54, 647 (1938). 10.1103/PhysRev.54.647
- (1938) Phys. Rev. , vol.54 , pp. 647
- Frenkel, J.¹

8
- 33644675163
- 10.1063/1.2181202
- J. Coutinho, V. J. B. Torres, R. Jones, A. Carvalho, S. Oberg, and P. R. Briddon, Appl. Phys. Lett. 88, 091919 (2006). 10.1063/1.2181202
- (2006) Appl. Phys. Lett. , vol.88 , pp. 091919
- Coutinho, J.¹ Torres, V.J.B.² Jones, R.³ Carvalho, A.⁴ Oberg, S.⁵ Briddon, P.R.⁶

9
- 0034667105
- 10.1103/PhysRevB.62.10116
- J. Fage-Pedersen, A. N. Larsen, and A. Mesli, Phys. Rev. B 62, 10116 (2000). 10.1103/PhysRevB.62.10116
- (2000) Phys. Rev. B , vol.62 , pp. 10116
- Fage-Pedersen, J.¹ Larsen, A.N.² Mesli, A.³

10
- 0002379647
- 10.1051/rphysap:0198000150101500
- F. Poulin and J. C. Bourgoin, Rev. Phys. Appl. 15, 15 (1980). 10.1051/rphysap:0198000150101500
- (1980) Rev. Phys. Appl. , vol.15 , pp. 15
- Poulin, F.¹ Bourgoin, J.C.²

11
- 0005370852
- 10.1103/PhysRevB.28.3372
- P. M. Mooney, F. Poulin, and J. C. Bourgoin, Phys. Rev. B 28, 3372 (1983). 10.1103/PhysRevB.28.3372
- (1983) Phys. Rev. B , vol.28 , pp. 3372
- Mooney, P.M.¹ Poulin, F.² Bourgoin, J.C.³

12
- 33947304937
- 10.1063/1.2713864
- Vl. Kolkovsky, M. C. Petersen, and A. Nylandsted Larsen, Appl. Phys. Lett. 90, 112110 (2007). 10.1063/1.2713864
- (2007) Appl. Phys. Lett. , vol.90 , pp. 112110
- Kolkovsky, Vl.¹ Petersen, M.C.² Nylandsted Larsen, A.³

13
- 0036135789
- 10.1016/S0168-583X(01)00893-X
- H. av Skardi, A. Bro Hansen, A. Mesli, A. Nylandsted Larsen, Nucl. Instrum. Methods Phys. Res. B 186, 195 (2002). 10.1016/S0168-583X(01)00893-X
- (2002) Nucl. Instrum. Methods Phys. Res. B , vol.186 , pp. 195
- Av Skardi, H.¹ Bro Hansen, A.² Mesli, A.³ Nylandsted Larsen, A.⁴

14
- 35248858533
- 10.1103/PhysRevB.34.5621
- C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986). 10.1103/PhysRevB.34.5621
- (1986) Phys. Rev. B , vol.34 , pp. 5621
- Van De Walle, C.G.¹ Martin, R.M.²

15
- 77954833439
- The Stopping and Range of Ions in Solids-SRIM 2003
- J. F. Ziegler, The Stopping and Range of Ions in Solids-SRIM 2003, http://www.SRIM.com.
- Ziegler, J.F.¹

16
- 84875528642
- in London Institute of Physics, London
- H. J. Stein, in Radiation Damage and Defects in Semiconductors (London Institute of Physics, London, 1973).
- (1973) Radiation Damage and Defects in Semiconductors
- Stein, H.J.¹

17
- 34347330254
- 10.1103/PhysRevB.75.195208
- C. Janke, R. Jones, S. Oberg, and P. R. Briddon, Phys. Rev. B 75, 195208 (2007). 10.1103/PhysRevB.75.195208
- (2007) Phys. Rev. B , vol.75 , pp. 195208
- Janke, C.¹ Jones, R.² Oberg, S.³ Briddon, P.R.⁴

18
- 0032027961
- 10.1103/PhysRevLett.80.2626
- H. Haesslein, R. Sielemann, and C. Zistl, Phys. Rev. Lett. 80, 2626 (1998). 10.1103/PhysRevLett.80.2626
- (1998) Phys. Rev. Lett. , vol.80 , pp. 2626
- Haesslein, H.¹ Sielemann, R.² Zistl, C.³

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