Engineering electronic properties of graphene by coupling with Si-Rich, two-dimensional Islands

ACS Nano

Volumn 7, Issue 1, 2013, Pages 301-307

  Lee, Dong Hyun ^a   Yi, Jaeseok ^a   Lee, Jung Min ^a   Lee, Sang Jun ^b   Doh, Yong Joo ^b   Jeong, Hu Young ^c   Lee, Zonghoon ^c   Paik, Ungyu ^a   Rogers, John A ^d   Park, Won Il ^a  

^a Hanyang University   (South Korea)

^b Korea University   (South Korea)

^c Ulsan National Institute of Science and Technology   (South Korea)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

bandgap engineering; graphene; silicon islands; sublattice asymmetry; van der Waals growth

Indexed keywords

BAND GAP ENGINEERING; CURRENT LEVELS; CURRENT-VOLTAGE MEASUREMENTS; DIRAC POINT; ENHANCED TRANSCONDUCTANCE; EXPERIMENTAL STUDIES; GRAPHENE SHEETS; LATERAL SIZES; OPTICAL SPECTROSCOPY; SI LAYER; SILICON ISLANDS; SUB-LATTICES; SUBLATTICE SYMMETRY; TEMPERATURE DEPENDENT; TWO-DIMENSIONAL (2D) ISLANDS; ULTRA-THIN; VAN DER WAALS; VAN DER WAALS INTERACTIONS;

ATOMIC FORCE MICROSCOPY; ELECTRONIC PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL; VAN DER WAALS FORCES;

GRAPHENE;

GRAPHITE; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; NANOSTRUCTURES; PARTICLE SIZE; SILICON; TRANSISTORS, ELECTRONIC;

MLCS; MLOWN;

EID: 84872830964     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304007x     Document Type: Article

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