Investigation of boron implantation into silicon by quantitative energy-filtered transmission electron microscopy

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Walther, T ^a   England, J ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; HIGH RESOLUTION ELECTRON MICROSCOPY; INTELLIGENT SYSTEMS; MASS SPECTROMETRY; MONTE CARLO METHODS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON OXIDES; SYSTEMATIC ERRORS; TRANSMISSION ELECTRON MICROSCOPY;

BORON IMPLANTATION; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; ENERGY-LOSS SPECTROSCOPIC PROFILING; SCATTERING CROSS SECTION; SECONDARY ION MASS SPECTROMETRY PROFILES; SPATIAL RESOLUTION; STATISTICAL ERRORS; SURFACE PROFILING;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 82955219672     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012053     Document Type: Conference Paper

References (7)

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