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Vacuum

Volumn 93, Issue , 2013, Pages 7-12

A study of the surface reaction on the etched ITO thin films by using inductively coupled plasma

(4) Kim, Han Soo a Woo, Jong Chang a Joo, Young Hee a Kim, Chang Il a

a Chung Ang University (South Korea)

Author keywords

AFM; CF4 Ar; ITO; XPS

Indexed keywords

AFM; DC BIAS VOLTAGE; ETCH RATES; ETCHED SURFACE; ETCHING CHARACTERISTICS; ETCHING CONDITION; GAS MIXING RATIO; INDIUM TIN OXIDE THIN FILMS; ITO; ITO THIN FILMS; PROCESS PRESSURE; RF-POWER; STANDARD CONDITIONS; SUBSTRATE TEMPERATURE;

ARGON; ATOMIC FORCE MICROSCOPY; ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTOELECTRONS; SURFACE REACTIONS; TIN; TIN OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 84872775998 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2012.11.015 Document Type: Article

Times cited : (3)

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