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Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

(4) Akiyama, Morito a Umeda, Keiichi b Honda, Atsushi b Nagase, Toshimi a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japan)

b MURATA MANUFACTURING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALUMINUM NITRIDE THIN FILMS; COSPUTTERING; FIGURE OF MERITS; LEAD ZIRCONATE TITANATE; PIEZOELECTRIC THIN FILMS; RELATIVE PERMITTIVITY;

ALUMINUM; ALUMINUM NITRIDE; LEAD; METALLIC FILMS; SEMICONDUCTING LEAD COMPOUNDS; THIN FILMS;

SCANDIUM;

EID: 84872730909 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4788728 Document Type: Article

Times cited : (176)

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