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Japanese Journal of Applied Physics

Volumn 51, Issue 12, 2012, Pages

Photoluminescence study of deep levels in CuInS2 thin films grown by sulfurization using ditertiarybutylsulfide

(3) Liu, Xiaohui a,b,c Dou, Xiaoming a,c,d Sugiyama, Mutsumi b,c

a SHANGHAI JIAO TONG UNIVERSITY (China)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

c UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY (China)

d WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP DEFECTS; DEEP DONOR; DEEP-LEVELS; DEFECT LEVELS; DONOR-ACCEPTOR PAIR EMISSION; EXCITATION POWER; INTRINSIC DEFECTS; PL EMISSION; PL MEASUREMENTS; SPECTROSCOPY MEASUREMENTS; TEMPERATURE DEPENDENT; TRAP LEVELS;

PHOTOLUMINESCENCE SPECTROSCOPY; THIN FILMS;

FILM PREPARATION;

EID: 84872582314 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.122403 Document Type: Article

Times cited : (4)

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