Structural and electronic properties of epitaxially grown CuInS2 films

Thin Solid Films

Volumn 361, Issue , 2000, Pages 504-508

  Metzner, H ^a   Bremer, J H ^a   Seibt, M ^b   Plikat, B ^b   Dirnstorfer, I ^c   Meyer, B K ^c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

^c JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CHALCOPYRITES;

SEMICONDUCTING FILMS;

EID: 0343628840     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00804-4     Document Type: Article

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