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Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 1, 2011, Pages

Sulfurization growth of CuInS2 thin film using ditertiarybutylsulfide as a less hazardous source

(4) Sugiyama, Mutsumi a Fujiwara, Chika a Shoji, Ryuki a Chichibu, Shigefusa b

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE SOURCE; CHARACTERISTIC EMISSION; HAZARDOUS SOURCES; LARGE SCALE EQUIPMENTS; LOW TEMPERATURES; PHOTOLUMINESCENCE SPECTRUM; POLYCRYSTALLINE; SULFURIZATION GROWTH; SULFURIZATION TEMPERATURE;

ORGANOMETALLICS; PHOTOLUMINESCENCE;

NANOSTRUCTURED MATERIALS;

EID: 79959443649 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.065503 Document Type: Article

Times cited : (7)

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