PL study of CIGS thin films implanted with He and D ions

Thin Solid Films

Volumn 361, Issue , 2000, Pages 488-493

  Yakushev, M V ^a   Martin, R W ^b   Krustok, J ^c   Schock, H W ^d   Pilkington, R D ^a   Hill, A E ^a   Tomlinson, R D ^a  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c TALLINN UNIVERSITY OF TECHNOLOGY   (Estonia)

^d UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COPPER COMPOUNDS; DEPOSITION; DEUTERIUM; DIFFUSION IN SOLIDS; EVAPORATION; GRAIN BOUNDARIES; HELIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING GLASS; SUBSTRATES;

LATTICE RECOVERY;

SEMICONDUCTING FILMS;

EID: 0033895108     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00801-9     Document Type: Article

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