GaN-based light-emitting diodes with photonic crystals structures fabricated by porous anodic alumina template

Optics Express

Volumn 19, Issue 105, 2011, Pages A1104-A1108

  Fu, XingXing ^a   Zhang, Bei ^a   Kang, XiangNing ^a   Deng, JunJing ^a   Xiong, Chang ^a   Dai, Tao ^b   Jiang, XianZhe ^a   Yu, TongJun ^a   Chen, ZhiZhong ^a   Zhang, Guo Yi ^a  

^a PEKING UNIVERSITY   (China)

^b Chinese Academy of Sciences   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM SHEET; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTONIC CRYSTALS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; PLASMA ETCHING;

ETCHING MASKS; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; LIGHT OUTPUT POWER; PORE DEPTH; POROUS ANODIC ALUMINA; POROUS ANODIC ALUMINA TEMPLATE; WAVELENGTH SCALE;

LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 80052743700     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.0A1104     Document Type: Article

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