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Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 1, 2013, Pages 113-117

High quality ZnO:Al thin films deposited by using initial sputtering condition

(2) Kim, Deok Kyu a Kim, Hong Bae b

a SAMSUNG Electronics (South Korea)

b Chongju University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; AZO THIN FILMS; CRITICAL FACTORS; CRYSTALLINITIES; HIGH QUALITY; INITIAL PRESSURE; RESIDUAL GAS; ROOM TEMPERATURE; SPUTTERING CONDITIONS; STOICHIOMETRIC COMPOSITIONS; THIN FILMS-SPUTTERED; VISIBLE-WAVELENGTH RANGE; ZNO; ZNO:AL THIN FILMS;

ALUMINUM; DEPOSITS; ZINC OXIDE;

THIN FILMS;

EID: 84871999760 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-012-0938-8 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.