Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H 2 ambient at room temperature

Thin Solid Films

Volumn 520, Issue 23, 2012, Pages 6963-6969

  Zhu, B L ^a   Wang, J ^a   Zhu, S J ^a   Wu, J ^a   Zeng, D W ^b   Xie, C S ^b  

^a WUHAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Al doped ZnO; Energy gap (E g); Hydrogen doping; Magnetron sputtering; Resistivity; Sputtering parameters; Thin films; Transmittance

Indexed keywords

AL-DOPED ZNO; CRYSTALLINITIES; FLOW RATIOS; HYDROGEN DOPING; NONMONOTONE; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SPUTTERING PARAMETERS; SPUTTERING PRESSURES; SUBSTRATE TEMPERATURE; TRANSMITTANCE;

ALUMINUM; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; HYDROGEN; MAGNETRON SPUTTERING; METALLIC FILMS; MICROSTRUCTURAL EVOLUTION; OPTIMIZATION; SURFACE ROUGHNESS; THIN FILMS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84865480213     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.049     Document Type: Article

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