The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs

Journal of Electronic Materials

Volumn 42, Issue 1, 2013, Pages 15-20

  Esposto, Michele ^a   Lecce, Valerio Di ^a   Bonaiuti, Matteo ^a   Chini, Alessandro ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

AlGaN GaN high electron mobility transistors (HEMTs); copper diffusion; copper gate; drain current collapse; interface trap; Schottky contact

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; COPPER DIFFUSION; CURRENT COLLAPSE; INTERFACE TRAPS; SCHOTTKY CONTACTS;

ACTIVATION ENERGY; AUTOMOBILE MANUFACTURE; COPPER; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TRANSIENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84871742004     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2268-2     Document Type: Article

References (20)

1. U.K. Mishra, L. Shen, T.E. Kazior, and Y.-F. Wu, Proc. IEEE 96, 287 (2008).
2. A.C. Schmitz, A.T. Ping, M. Asif Khan, Q. Chen, J.W. Yang, and I. Adesida, J. Electron. Mater. 27, 255 (1998).
3. G.H. Jessen, R.C. Fitch, J.K. Gillespie, G.D. Via, N.A. Moser, M.J. Yannuzzi, A. Crespo, R.W. Dettmer, and T.J. Jenkins, Proc. IEEE GaAs Symp., Nov. 2003, pp. 277-279.
4. Y. Yamashita, A. Endoh, K. Ikeda, K. HikosakaL, T. Mimura, M. HigashiwakiL, T. Matsui, and S. Hiyamizu, J. Vac. Sci. Technol. B, Microel. Process. Phenom. 23, L13 (2005).
5. J.-P. Ao, D. Kikuta, N. Kubota, Y. Naoi, and Y. Ohno, IEEE Electron. Dev. Lett. 24, 500 (2003).
6. H.F. Sun, A.R. Alt, and C.R. Bolognesi, IEEE Electron. Dev. Lett. 28(5), May 2007.
7. L. Wang, M.I. Nathan, T.-H. Lim, M.A. Khan, and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
8. R. Vetury, N.Q. Zhang, S. Keller, and U.K. Mishra, IEEE Trans. Electron. Dev. 48, 560 (2001).
9. Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. Keller, and U.K. Mishra, 1999 IEDM Technical Digest, Dec. 1999, pp. 925-927.
10. J.R. Shealy, V. Kaper, V. Tilak, T. Prunty, J.A. Smart, B. Green, and L.F. Eastman, Condens. Matter 14, 3499 (2002).
11. M. Hiroshi, K. Hisao, and H. Kenji, J. Appl. Phys. 81, 7746 (1997).
12. E.R. Weber, Appl. Phys. A 30, 1 (1983).
13. A. Cros, M.O. Aboelfotoh, and K.N. Tu, J. Appl. Phys. 67, 3328 (1990).
14. C.-A. Chang, J. Appl. Phys. 67, 566 (1990).
15. P.H. Wohlbier, (Trans. Tech, OH, 1975), Vol. 10, pp. 89-91.
16. C.-Y. Chen, L. Chang, E.Y. Chang, S.-H. Chen, and D.-F. Chang, Appl. Phys. Lett. 77(21), Nov. 20, 2000.
17. D.A. MacQuistan and F. Weinberg, J. Cryst. Growth 110, 745 (1991).
18. R.N. Hall and J.H. Racette, J. Appl. Phys. 35, 379 (1964).
19. C.S. Fuller, J.M. Whelan, and J. Phys, Chem. Solids 6, 173 (1958).
20. Y. Furukawa, J. Phys. Chem. Solids 26, 1869 (1965).