Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 277-279

  Jessen, G H ^a   Fitch, R C ^a   Gillespie, J K ^a   Via, G D ^a   Moser, N A ^a   Yannuzzi, M J ^a   Crespo, A ^a   Dettmer, R W ^a   Jenkins, T J ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

GaN; High electron mobility transistor (HEMT); Power; Schottky; SiC

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; GATES (TRANSISTOR); IRIDIUM; NICKEL; PALLADIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSCONDUCTANCE; TUNGSTEN COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; SEMI-INSULATING SILICON CARBIDE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0346305082     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252410     Document Type: Conference Paper

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