120-nm -T-shaped- MoPtAu -gate AlGaNGaN high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages

  Yamashita, Yoshimi ^a   Endoh, Akira ^a   Ikeda, Keiji ^a,d   Hikosaka, Kohki ^a   Mimura, Takashi ^a   Higashiwaki, Masataka ^b   Matsui, Toshiaki ^b   Hiyamizu, Satoshi ^c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS;

GATE-SOURCE VOLTAGE; SAPPHIRE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 31144460694     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2013315     Document Type: Conference Paper

References (15)

1. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, IEEE Electron Device Lett. 25, 117 (2004).
2. Y. Okamoto, Y. Ando, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata, and M. Kuzuhara, Electron. Lett. 40, 629 (2004).
3. V. Kumar, D. Selvanathan, A. Kuliev, S. Kim, J. Flynn, and I. Adesida, Electron. Lett. 39, 747 (2003).
4. L. Zhou, A. T. Ping, K. Boutros, J. Redwing, and I. Adesida, Electron. Lett. 35, 745 (1999).
5. J.-P. Ao, D. Kikuta, N. Kubota, Y. Naoi, and Y. Ohno, IEEE Electron Device Lett. 24, 500 (2003).
6. T. Nanjo, N. Miura, T. Oishi, M. Suita, Y. Abe, T. Ozeki, S. Nakatsuka, A. Inoue, T. Ishikawa, Y. Matsuda, H. Ishikawa, and T. Egawa, Jpn. J. Appl. Phys., Part 1 43, 1925 (2004).
7. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
8. A. Endoh, Y. Yamashita, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu, and T. Matsui, Jpn. J. Appl. Phys., Part 1 41, 1094 (2002).
9. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, Phys. Status Solidi C 0, 2368 (2003).
10. A. S. Wakita, C.-Y. Su, H. Rohdin, H.-Y. Liu, A. Lee, J. Seeger, and V. M. Robbins, J. Vac. Sci. Technol. B 13, 2725 (1995).
11. K. Shinohara, Y. Yamashita, K. Hikosaka, N. Hirose, M. Kiyokawa, T. Matsui, T. Mimura, and S. Hiyamizu, in Proceedings of the Gallium Arsenide and Other Semiconductors Appl. Symposium, 2000, p. 252.
12. H. Norde, J. Appl. Phys. 50, 5052 (1979).
13. T. Hashizume and M. Kaneko, IEICE Technical Report 104, 37 (2005) (in Japanese).
14. The Chemical Society of Japan, Kagaku Binran Kiso-hen II, 4th ed. (Maruzen, Tokyo, 1993), II-422 (in Japanese).
15. Y. Yamashita, A. Endoh, K. Shinohara, M. Higashiwaki, K. Hikosaka, T. Mimura, S. Hiyamizu, and T. Matsui, IEEE Electron Device Lett. 22, 367 (2001).