Resistive switching in HfO 2 probed by a metal-insulator- semiconductor bipolar transistor

IEEE Electron Device Letters

Volumn 33, Issue 1, 2012, Pages 11-13

  Yalon, E ^a   Gavrilov, A ^a   Cohen, S ^a   Mistele, D ^a   Meyler, B ^a   Salzman, J ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Resistive random access memory; resistive switching (RS); tunneling emitter bipolar transistor

Indexed keywords

BIPOLAR TRANSISTOR STRUCTURE; CONDUCTION MECHANISM; METAL INSULATORS; METAL-INSULATOR-SEMICONDUCTORS; P-N JUNCTION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SENSITIVE DETECTOR; SWITCHING EFFECT;

BIPOLAR TRANSISTORS; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; MIS DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR JUNCTIONS; SWITCHING; SWITCHING SYSTEMS;

TRANSISTORS;

EID: 84655161271     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2171317     Document Type: Review

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