The initialization and manipulation of quantum information stored in silicon by bismuth dopants

Nature Materials

Volumn 9, Issue 9, 2010, Pages 725-729

  Morley, Gavin W ^a   Warner, Marc ^a   Stoneham, A Marshall ^a   Greenland, P Thornton ^a   Van Tol, Johan ^b   Kay, Christopher W M ^a   Aeppli, Gabriel ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; DATA HANDLING; DIGITAL STORAGE; DOPING (ADDITIVES); ELECTRONS; ELECTROSPINNING; HILBERT SPACES; MAGNETIC MOMENTS; MAGNETIC RESONANCE; PURIFICATION; QUANTUM OPTICS; QUANTUM THEORY; SPIN DYNAMICS; VECTOR SPACES;

DEFECT SPECIES; ELECTRON SPIN COHERENCE; ELECTRON SPINS; HYPERPOLARIZED; NUCLEAR SPINS; OF QUANTUM-INFORMATION; QUANTUM INFORMATION; SPIN COHERENCE;

SILICON;

BISMUTH; PHOSPHORUS; SILICON;

ARTICLE; CHEMISTRY; ELECTRON; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY;

BISMUTH; ELECTRONS; MAGNETIC RESONANCE SPECTROSCOPY; PHOSPHORUS; SILICON;

EID: 77956063086     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2828     Document Type: Article

References (32)

1. Kane, B. E. A silicon-based nuclear spin quantum computer. Nature 393, 133-137 (1998).
2. Schofield, S. R. et al. Atomically precise placement of single dopants in Si. Phys. Rev. Lett. 91, 136104 (2003).
3. Morton, J. J. L. et al. Solid-state quantum memory using the P-31 nuclear spin. Nature 455, 1085-1088 (2008).
4. Morley, G. W. et al. Long-lived spin coherence in silicon with an electrical spin trap readout. Phys. Rev. Lett. 101, 207602 (2008).
5. Greenland, P. T. et al. Coherent control of Rydberg states in silicon. Nature 465, 1057-1061 (2010).
6. McCamey, D. R., van Tol, J., Morley, G. W. & Boehme, C. Fast nuclear spin hyperpolarization of phosphorus in silicon. Phys. Rev. Lett. 102, 027601 (2009).
7. van Tol, J. et al. High-field phenomena of qubits. Appl. Magn. Res. 36, 259-268 (2009).
8. Tyryshkin, A. M. et al. Coherence of spin qubits in silicon. J. Phys. Condens. Matter 18, S783-S794 (2006).
9. Morello, A. et al. Single-shot readout of an electron spin in silicon. Preprint at http://arxiv.org/abs/1003.2679 (2010).
10. Yang, A. et al. Subsecond hyperpolarization of the nuclear and electron spins of phosphorus in silicon by optical pumping of exciton transitions. Phys. Rev. Lett. 102, 257401 (2009).
11. Tyryshkin, A. M., Lyon, S. A., Astashkin, A. V. & Raitsimring, A. M. Electron spin relaxation times of phosphorus donors in silicon. Phys. Rev. B 68, 193207 (2003).
12. Benjamin, S. C. Quantum computing without local control of qubit-qubit interactions. Phys. Rev. Lett. 88, 017904 (2002).
13. Stoneham, A. M., Fisher, A. J. & Greenland, P. T. Optically driven silicon-based quantum gates with potential for high-temperature operation. J. Phys. Condens. Matter 15, L447-L451 (2003).
14. Benjamin, S. C. & Bose, S. Quantum computing with an always-on Heisenberg interaction. Phys. Rev. Lett. 90, 247901 (2003).
15. Stoneham, A. M., Harker, A. H. & Morley, G. W. Could one make a diamond-based quantum computer? J. Phys. Condens. Matter 21, 364222 (2009).
16. Feher, G. Electron spin resonance experiments on donors in silicon. I. Electronic structure of donors by the electron nuclear double resonance technique. Phys. Rev. 114, 1219-1244 (1959).
17. Pajot, B. & Stoneham, A. M. A spectroscopic investigation of the lattice distortion at substitutional sites for group V and group VI donors in silicon. J. Phys. C 20, 5241-5252 (1987).
18. Morley, G. W., Brunel, L-C. & van Tol, J. A multifrequency high-field pulsed electron paramagnetic resonance/electron-nuclear double resonance spectrometer. Rev. Sci. Instrum. 79, 064703 (2008).
19. van Tol, J., Brunel, L. C. & Wylde, R. J. A quasioptical transient electron spin resonance spectrometer operating at 120 and 240 GHz. Rev. Sci. Instrum. 76, 074101 (2005).
20. Morley, G. W. et al. Efficient dynamic nuclear polarization at high magnetic fields. Phys. Rev. Lett. 98, 220501 (2007).
21. Lampel, G. Nuclear dynamic polarization by optical electronic saturation and optical pumping in semiconductors. Phys. Rev. Lett. 20, 491-493 (1968).
22. Sekiguchi, T. et al. Hyperfine structure and nuclear hyperpolarization observed in the bound exciton luminescence of Bi donors in natural Si. Phys. Rev. Lett. 104, 137402 (2010).
23. Schweiger, A. & Jeschke, G. Principles of Pulse Electron Paramagnetic Resonance (Oxford Univ. Press, 2001).
24. Castner, T. G. Direct measurement of the valley-orbit splitting of shallow donors in silicon. Phys. Rev. Lett. 8, 13-15 (1962).
25. Castner, T. G. Orbach spin-lattice relaxation of shallow donors in silicon. Phys. Rev. 155, 816-825 (1967).
26. Feher, G. & Gere, E. A. Electron spin resonance experiments on donors in silicon II. Electron spin relaxation effects. Phys. Rev. 114, 1245-1256 (1959).
27. Du, J. F. et al. Preserving electron spin coherence in solids by optimal dynamical decoupling. Nature 461, 1265-1268 (2009).
28. Li, D. et al. Intrinsic origin of spin echoes in dipolar solids generated by strong- pulses. Phys. Rev. B 77, 214306 (2008).
29. Balasubramanian, G. et al. Ultralong spin coherence time in isotopically engineered diamond. Nature Mater. 8, 383-387 (2009).
30. Tyryshkin, A. M. & Lyon, S. A. Data presented at the Silicon Qubit Workshop 24-25 August (Univ. California, sponsored by Lawrence Berkeley National Laboratory and Sandia National Laboratory, 2009).
31. Mohammadi, H. M., Morley, G. W. & Monteiro, T. S. Bismuth qubits in silicon: the role of EPR cancellation resonances. Phys. Rev. Lett. (in the press); preprint at http://arxiv.org/abs/1004.3475 (2010).
32. George, R. E. et al. Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si. Phys. Rev. Lett. (in the press); preprint at http://arxiv.org/abs/1004.0340 (2010).