Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

ACS Nano

Volumn 6, Issue 12, 2012, Pages 11074-11079

  Shin, Jae Cheol ^a,b   Mohseni, Parsian K ^a   Yu, Ki Jun ^a   Tomasulo, Stephanie ^c   Montgomery, Kyle H ^d   Lee, Minjoo L ^c   Rogers, John A ^a   Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Yale University   (United States)

^d Purdue University   (United States)

Author keywords

MOCVD; nanowires; silicon; solar cells

Indexed keywords

CONVERSION EFFICIENCY; ENERGY CONVERSION; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SILICON; SOLAR CELLS;

BACK REFLECTORS; EFFICIENCY ENHANCEMENT; EXTERNAL QUANTUM EFFICIENCY; HETEROGENEOUS INTEGRATION; NANOWIRE ARRAYS; SI SOLAR CELLS; SI(111) SUBSTRATE; WAVELENGTH RANGES;

SILICON SOLAR CELLS;

EID: 84871533570     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304784y     Document Type: Article

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