Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates

Crystal Growth and Design

Volumn 12, Issue 6, 2012, Pages 2994-2998

  Shin, Jae Cheol ^a,b   Choi, Kyoung Jin ^c   Kim, Do Yang ^d   Choi, Won Jun ^d   Li, Xiuling ^a  

^a United States of America   (United States)

^b Photonic Energy Center   (South Korea)

^c Ulsan National Institute of Science and Technology   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION VARIATION; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; MORPHOLOGICAL FEATURES; SI(111) SUBSTRATE; SILICON SUBSTRATES; SMALL FLUCTUATION; VAPOR-LIQUID-SOLID MECHANISM;

ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; NANOWIRES; VAPORS;

GALLIUM;

EID: 84861919474     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg300210h     Document Type: Article

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