Fabrication of GaN dot structure by droplet epitaxy using NH3

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 486-489

  Maruyama, Takahiro ^a   Otsubo, Hiroaki ^a   Kondo, Toshiyuki ^a   Yamamoto, Yo ^a   Naritsuka, Shigeya ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; B1. Nanomaterials; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

EVAPORATION; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NITRIDATION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE;

DOT SIZE; DROPLET EPITAXY; POST GROWTH ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33947314146     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.031     Document Type: Article

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