Survival of atomic monolayer steps during oxide desorption on GaAs (100)

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Lee, J H ^a   Wang, Zh M ^a   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DESORPTION; OPTOELECTRONIC DEVICES; PITTING; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ATOMIC MONOLAYER STEPS; ROOT MEAN SQUARE ROUGHNESS; SUBSTRATE TEMPERATURE; THERMAL OXIDE DESORPTION;

MONOLAYERS;

EID: 33845736069     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2401649     Document Type: Article

References (15)

1. U. Resch-Esser, N. Esser, C. Springer, J. Zegenhagen, W. Richter, M. Cardona, and B. O. Fimland, J. Vac. Sci. Technol. B 13, 1672 (1995).
2. Z. M. Wang and G. J. Salamo, Phys. Rev. B 67, 125324 (2003).
3. J. E. Epler, T. A. Jung, and H. P. Schweizer, Appl. Phys. Lett. 62, 143 (1993).
4. G. W. Smith, A. J. Pidduck, C. R. Whitehouse, J. L. Glasper, A. M. Keir, and C. Pickering, Appl. Phys. Lett. 59, 3282 (1991).
5. T. Van Buuren, M. K. Weimeier, I. Athwal, K. M. Colbow, J. A. Mackenzie, T. Tiedje, P. C. Wong, and K. A. R. Mitchell, Appl. Phys. Lett. 59, 464 (1991).
6. A. J. Spring Thorpe, S. J. Ingrey, B. Emmerstorfer, P. Mandeville, and W. T. Moore, J. Vac. Sci. Technol. B 5, 739 (1987).
7. J. H. Lee, Zh. M. Wang, and G. J. Salamo, Appl. Phys. Lett. 88, 252108 (2006).
8. Z. R. Wasilewski, J.-M. Baribeau, M. Beaulieu, X. Wu, and G. I. Sproule, J. Vac. Sci. Technol. B 22, 1534 (2004).
9. Y. Asaoka, J. Cryst. Growth 251, 40 (2003).
10. A. Khatire, J. M. Ripalda, T. J. Krzyzewski, G. R. Bell, C. F. McConville, and T. S. Jones, Surf. Sci. 548, L1 (2004).
11. A. Khatiri, J. M. Ripalda, T. J. Krzyzewski, and T. S. Jones, Surf. Sci. 549, 143 (2004).
12. K. G.. Eyink and L. Grazulis, J. Vac. Sci. Technol. B 23, 554 (2005).
13. J. H. Lee, Zh. M. Wang, B. L. Liang, W. T. Black, V. P. Kunets, Y. I. Mazur, and G. J. Salamo, Nanotechnology 17, 2275 (2006).
14. T.-P. Hsieh, P.-C. Chiu, Y.-C. Liu, N.-T. Yeh, and W.-J. Ho, and J.-I.. Chyi, J. Vac. Sci. Technol. B 23, 262 (2005).
15. R. Tsui, R. Zhang, K. Shiralagi, and H. Goronkin, Appl. Phys. Lett. 71, 3254 (1997).