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Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1832-1835

Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxy

(3) Pankaow, N a Panyakeow, S a Ratanathammaphan, S a

a CHULALONGKORN UNIVERSITY (Thailand)

Author keywords

A1. Droplet; A1. Nanostructures; A3. Molecular beam epitaxy; B1. GaAs; B1. InGaAs; B1. Quantum rings

Indexed keywords

CRYSTAL GROWTH; DROP FORMATION; FORMING; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; NANORINGS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES;

A1. DROPLET; A1. NANOSTRUCTURES; A3. MOLECULAR BEAM EPITAXY; B1. GAAS; B1. INGAAS; B1. QUANTUM RINGS;

MOLECULAR BEAMS;

EID: 63349093931 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.11.003 Document Type: Article

Times cited : (21)

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