Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: Evidences for light localization effect

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-6

  Osminkina, Liubov A ^a   Gonchar, Kirill A ^a   Marshov, Vladimir S ^a   Bunkov, Konstantin V ^a   Petrov, Dmitry V ^a   Golovan, Leonid A ^a   Talkenberg, Florian ^b   Sivakov, Vladimir A ^b   Timoshenko, Victor Yu ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

Black silicon; Light localization; Raman scattering; Silicon nanowires

Indexed keywords

ETCHING; HYDROFLUORIC ACID; NANOWIRES; RAMAN SCATTERING; REFLECTION; REFRACTIVE INDEX; SILICON; SILICON COMPOUNDS; SUBSTRATES;

BLACK SILICON; EFFECTIVE MEDIUM APPROXIMATION; EFFECTIVE REFRACTIVE INDEX; LIGHT LOCALIZATION; LIGHT-MATTER INTERACTIONS; METAL-ASSISTED CHEMICAL ETCHING; RAMAN SCATTERING INTENSITY; SILICON NANOWIRES;

NITROGEN COMPOUNDS;

EID: 84871000959     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-524     Document Type: Article

References (26)

1. Yang P, Yan R, Fardy M: Semiconductor nanowire: what's next? Nano Lett 2010, 10:1529-1536.
2. Hu J, Ouyang M, Yang P, Lieber CM: Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowires. Nature 1999, 399:48-51.
3. Föll H, Hartz H, Ossei-Wusu E, Carstensen J, Riemenschneider O: Si nanowire arrays as anodes in Li ion batteries. Phys Status Solidi RRL 2010, 4(1,2):4-6.
4. Bronstrup G, Jahr N, Leiterer C, Csaki A, Fritzsche W, Christiansen S: Optical properties of individual silicon nanowires for photonic devices. ACS Nano 2010, 4(12):7113-7122.
5. Kelzenberg MD, Turner-Evans DB, Kayes BM, Filler MA, Putnam MC, Lewis NS, Atwater HA: Photovoltaic measurements in single-nanowire silicon solar cells. Nano Lett 2008, 8:710-714.
6. Sivakov V, Andrä G, Gawlik A, Berger A, Plentz J, Falk F, Christiansen SH: Silicon nanowire-based solar cells on glass: synthesis, optical properties, and cell parameters. Nano Lett 2009, 9:1549-1554.
7. Hochbaum AI, Fan R, He R, Yang P: Controlled growth of Si nanowire arrays for device integration. Nano Lett 2005, 5:457-460.
8. Cui Y, Wei Q, Park H, Lieber CM: Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science 2001, 293:1289-1292.
9. Wang X, Ozkan CS: Multisegment nanowire sensors for the detection of DNA molecules. Nano Lett 2008, 8(2):398-404.
10. Sivakov VA, Voigt F, Berger A, Bauer G, Christiansen SH: Roughness of silicon nanowire sidewalls and room temperature photoluminescence. Phys Rev B 2010, 82:125446-125452.
11. Timoshenko VY, Gonchar KA, Golovan LA, Efimova AI, Sivakov VA, Dellith A, Christiansen SH: Photoluminescence and Raman scattering in arrays of silicon nanowires. J Nanoelectr Optoelectr 2011, 6(4):519-524.
12. Wagner RS, Ellis WC: Vapor-liquid-solid mechanism of single crystal growth. Appl Phys Lett 1964, 4:89-90.
13. Huang Z, Fang H, Zhu J: Fabrication of silicon nanowire arrays with controlled diameter, length, and density. Adv Mater 2007, 19:744-748.
14. Cui Y, Lauhon LJ, Gudiksen MS, Wang J, Lieber CM: Diameter-controlled synthesis of single-crystal silicon nanowires. Appl Phys Lett 2001, 78:2214-2216.
15. Ross FM, Tersoff J, Reuter MC: Sawtooth faceting in silicon nanowires. Phys Rev Lett 2005, 95:146104-146108.
16. Boarino L, Imbraguglio D, Enrico E, De Leo N, Celegato F, Tiberto P, Pugno N, Amato G: Fabrication of ordered silicon nanopillars and nanowires by self-assembly and metal-assisted etching. Phys Status Solidi A 2011, 208(6):1412-1416.
17. Huang Z, Geyer N, Werner P, de Boor J, Gösele U: Metal-assisted chemical etching of silicon: a review. Adv Mater 2011, 23:285-308.
18. Nassiopoulou AG, Gianneta V, Katsogridakis C: Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics. Nano Res Let 2011, 6:597.
19. Sivakov VA, Brönstrup G, Pecz B, Berger A, Radnoczi GZ, Krause M, Christiansen SH: Realization of vertical and zigzag single crystalline silicon nanowire architectures. J Phys Chem C 2010, 114:3798-3803.
20. Golovan LA, Timoshenko VY, Kashkarov PK: Optical properties of poroussystem-based nanocomposites. Phys Usp 2007, 50(6):595-612.
21. Sze SM: Physics of Semiconductor Devices. New York: Wiley; 1981.
22. Kovalev D, Heckler H, Polisski G, Koch F: Optical properties of Si nanocrystals. Phys Stat Sol (b) 1999, 215:871-932.
23. Cao L, Nabet B, Spanier JE: Enhanced Raman scattering from individual semiconductor nanocones and nanowires. Phys Rev Lett 2006, 96:157402.
24. Madan A, Shaw MP: The Physics and Application of Amorphous Semiconductors. Boston: Academic Press; 1988.
25. Gonchar KA, Golovan LA, Timoshenko VY, Sivakov VA, Christiansen S: Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures. Bull Russ Acad Sci Phys 2010, 74(12):1712-1714.
26. Mamichev DA, Timoshenko VY, Zoteyev AV, Golovan LA, Krutkova EY, Laktyunkin AV, Kashkarov PK, Astrova EV, Perova TS: Enhanced Raman scattering in grooved silicon matrix. Phys Stat Sol B 2009, 246:173-176.