Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures

Bulletin of the Russian Academy of Sciences: Physics

Volumn 74, Issue 12, 2010, Pages 1712-1714

  Gonchar, K A ^a   Golovan', L A ^a   Timoshenko, V Yu ^a   Sivakov, V A ^b   Christiansen, S ^b,c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

C-SI SUBSTRATES; LIGHT LOCALIZATION; OPTICAL EXCITATIONS; SI NANOWIRE; SILICON NANOSTRUCTURES; SILICON NANOWIRES; YAG:ND LASERS;

LASER EXCITATION; NANOWIRES; NEODYMIUM LASERS; PHOTOLUMINESCENCE; RAMAN SCATTERING;

LIGHT;

EID: 79951709779     PISSN: 10628738     EISSN: None     Source Type: Journal    
DOI: 10.3103/S1062873810120208     Document Type: Article

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