Photoluminescence and raman scattering in arrays of silicon nanowires

Journal of Nanoelectronics and Optoelectronics

Volumn 6, Issue 4, 2011, Pages 519-524

  Timoshenko, V Yu ^a   Gonchar, K A ^a   Golovan, L A ^a   Efimova, A I ^a   Sivakov, V A ^b   Dellith, A ^b   Christiansen, S H ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

Light Scattering; Photoluminescence; Raman Spectroscopy; Silicon Nanowires

Indexed keywords

1064 NM; BAND GAPS; CRYSTALLINE SI; CRYSTALLINE SILICON WAFERS; DOPING LEVELS; EXCITATION LIGHT; HIGH DOPING LEVEL; INTERBAND; LIGHT-TRAPPING; MEAN DIAMETER; PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY; PHOTOLUMINESCENCE BANDS; RADIATIVE RECOMBINATION; SI NANOCRYSTAL; SI NANOWIRE; SILICON NANOWIRE ARRAYS; SILICON NANOWIRES; SPECTRAL RANGE; SURFACE ORIENTATION; WET-CHEMICAL ETCHING;

CRYSTALLINE MATERIALS; LIGHT SCATTERING; NANOWIRES; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; WET ETCHING;

SILICON WAFERS;

EID: 84857219238     PISSN: 1555130X     EISSN: None     Source Type: Journal    
DOI: 10.1166/jno.2011.1205     Document Type: Article

References (22)

1. Y. Cui, L. J. Lauhon, M. S. Gudiksen, J. Wang, and C. M. Lieber, Appl. Phys. Lett. 78, 2214 (2001).
2. F. M. Ross, J. Tersoff, and M. C. Reuter, Phys. Rev. Lett. 95, 146104 (2005).
3. A. I. Hochbaum, R. Fan, R. He, and P. Yang, Nano Lett. 5, 457 (2005).
4. V. Schmidt, S. Senz, and U. Gösele, Nano Lett. 5, 931 (2005).
5. X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature 409, 66 (2001).
6. M. D. Kelzenberg, D. B. Turner-Evans, B. M. Kayes, M. A. Filler, M. C. Putnam, N. S. Lewis, and H. A. Atwater, Nano Lett. 8, 710 (2008).
7. V. Sivakov, G. Andrä, A. Gawlik, A. Berger, J. Plentz, F. Falk, and S. H. Christiansen, Nano Lett. 9, 1549 (2009).
8. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
9. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, Appl. Phys. Lett. 82, 909 (1997).
10. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).
11. V. A. Sivakov, G. Brönstrup, B. Pecz, A. Berger, G. Z. Radnoczi, M. Krause, and S. H. Christiansen, J. Phys. Chem. C 114, 3798 (2010).
12. V. A. Sivakov, F. Voigt, A. Berger, G. Bauer, and S. H. Christiansen, Phys. Rev. B 82, 125446 (2010).
13. V. A. Sivakov, F. Voigt, G. Brönstrup, G. Bauer, and S. H. Christiansen, Nanowires Nanotech. 2, 91 (2010).
14. C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 11024 (1993).
15. G. Ledoux, O. Guillois, D. Porterat, C. Reynaud, F. Huisken, B. Kohn, and V. Paillard, Phys. Rev. B. 62, 15942 (2000).
16. G. Ledoux, G. Gong, and F. Huisken, Appl. Phys. Lett. 79, 4028 (2001).
17. D. Kovalev, M. B. Chorin, J. Diener, F. Koch, Al. L. Efros, M. Rosen, N. A. Gippius, and S. G. Tikhodeev, Appl. Phys. Lett. 67, 1585 (1995).
18. M. G. Lisachenko, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov, Semicond. 36, 325 (2002).
19. E. H. S. Burhop, The Auger Effect and Other Radiationless Transitions, Cambridge Monographs on Physics, Cambridge (1952).
20. M. J. Kerr and A. Cuevas, J. Appl. Phys. 91, 2473 (2002).
21. S. M. Sze, Physics of Semiconductor Devices, John Wiley and Sons, N.Y. (1981).
22. D. A. G. Bruggeman, Ann. Phys. (Leipzig) 24, 636 (1935).