Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: Formation kinetics

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-8

  Nassiopoulou, Androula Galiouna ^a   Gianneta, Violetta ^a   Katsogridakis, Charalambos ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Formation kinetics; Lithographically defined areas; Metal assisted chemical etching; Si nanowires

Indexed keywords

COMPARATIVE STUDIES; ETCH RATES; ETCHING PROCESS; EXPERIMENTAL CONDITIONS; FORMATION KINETICS; LITHOGRAPHICALLY DEFINED AREAS; METAL-ASSISTED CHEMICAL ETCHING; NANOWIRE FORMATION; PHOTOLITHOGRAPHIC PROCESS; SI NANOWIRE; SI NANOWIRES; SI SURFACES; SINGLE-STEP;

ACTIVATION ENERGY; ARRHENIUS PLOTS; ETCHING; KINETICS; NANOWIRES; PHOTOLITHOGRAPHY;

SILICON;

EID: 84856048456     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-597     Document Type: Article

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