Modeling and analysis of closed-loop gate drive

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2010, Pages 1124-1130

  Chen, Lihua ^a   Ge, Baoming ^a   Peng, Fang Z ^a  

^a Michigan State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS METHOD; CIRCUIT BEHAVIORS; CLOSED-LOOP; GATE DRIVES; MATHEMATICAL METHOD; MODELING AND ANALYSIS; OPERATING CONDITION; POWER DEVICES; REAL APPLICATIONS; SIMULATED RESULTS; STATE EQUATIONS; SWITCHING TRANSIENT;

EQUATIONS OF STATE; POWER ELECTRONICS;

EQUIVALENT CIRCUITS;

EID: 77952115090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2010.5433360     Document Type: Conference Paper

References (10)

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3. IGBT CM1000HA-24H datasheet: http://www.pwrx.com/pwrx/docs/cm1000ha24h. pdf.
4. A. R. Hefner, Jr., "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Trans. on Power Electronics, vol. 6, issue 2, April 1991 pp. 208-219.
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8. A. T. Bryant,Y. Wang, S. J. Finney, T. C. Lim, and P. R. Palmer, "Numerical Optimization of an Active Voltage Controller for High-Power IGBT Converters," IEEE Tran. On Power Electronics. VOL. 22, NO. 2, MARCH 2007.
9. H. R. Muhammad, "Power Electronics-Circuits, Devices, and Applications," 3rd edition, Upper Saddle River, NJ, Pearson Prentice Hall, 2004.
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