-
1
-
-
0026136708
-
An investigation of the drive circuit requirements for the power insulated gate bipolar transistor
-
Mar
-
A. Hefner, "An investigation of the drive circuit requirements for the power insulated gate bipolar transistor," IEEE Trans. Power Electron., vol. 6, pp. 208-219, Mar. 1991.
-
(1991)
IEEE Trans. Power Electron
, vol.6
, pp. 208-219
-
-
Hefner, A.1
-
2
-
-
3843119376
-
Protecting IGBTs against short circuit
-
El Segundo, CA: International Rectifier
-
G. Castino, A. Dubashi, S. Clements, and B. Pelly, "Protecting IGBTs against short circuit," in IR IGBT Designer's Manual. El Segundo, CA: International Rectifier, 1991.
-
(1991)
IR IGBT Designer's Manual
-
-
Castino, G.1
Dubashi, A.2
Clements, S.3
Pelly, B.4
-
3
-
-
0035155193
-
Optimization and integration of an active clamping circuit for IGBT series association
-
Chicago, IL
-
J. Saiz, M. Mermet, D. Frey, P. O. Jeannin, J. L. Schanen, and P. Muszicki, "Optimization and integration of an active clamping circuit for IGBT series association," in Proc. IEEE Industry Applications Soc. Meeting (IAS'01), Chicago, IL, 2001.
-
(2001)
Proc. IEEE Industry Applications Soc. Meeting (IAS'01)
-
-
Saiz, J.1
Mermet, M.2
Frey, D.3
Jeannin, P.O.4
Schanen, J.L.5
Muszicki, P.6
-
4
-
-
84937415652
-
The series connection of IGBTs with optimized voltage sharing in the switching transisent
-
Atlanta, GA
-
P. R. Palmer and A. N. Githiari, "The series connection of IGBTs with optimized voltage sharing in the switching transisent," in Proc. IEEE PESC'95 Conf., Atlanta, GA, 1995, pp. 44-50.
-
(1995)
Proc. IEEE PESC'95 Conf
, pp. 44-50
-
-
Palmer, P.R.1
Githiari, A.N.2
-
5
-
-
0007087395
-
High power IGBT converters with new gate drive and protection circuit
-
Seville, Spain
-
S. Gediga, R. Marquardt, and R. Sommer, "High power IGBT converters with new gate drive and protection circuit," in Proc. 5th Eur. Power Electronics Conf. (EPE'95), vol. 1, Seville, Spain, 1995, pp. 66-70.
-
(1995)
Proc. 5th Eur. Power Electronics Conf. (EPE'95)
, vol.1
, pp. 66-70
-
-
Gediga, R.1
Marquardt, R.2
Sommer, R.3
-
6
-
-
0029474996
-
Active voltage balancement of series connected IGBTs
-
Orlando, FL, Oct
-
A. Consoli, S. Musumeci, G. Oriti, and A. Testa, "Active voltage balancement of series connected IGBTs," in Proc. IEEE Industry Applications Soc. Meeting, Orlando, FL, Oct. 1995, pp. 2752-2758.
-
(1995)
Proc. IEEE Industry Applications Soc. Meeting
, pp. 2752-2758
-
-
Consoli, A.1
Musumeci, S.2
Oriti, G.3
Testa, A.4
-
7
-
-
0021452819
-
An analysis and experimental verification of parasitic oscillations in paralled power MOSFETs
-
July
-
J. Kassakian and D. Lau, "An analysis and experimental verification of parasitic oscillations in paralled power MOSFETs," IEEE Trans. Electron. Devices, vol. 31, pp. 959-963, July 1984.
-
(1984)
IEEE Trans. Electron. Devices
, vol.31
, pp. 959-963
-
-
Kassakian, J.1
Lau, D.2
-
8
-
-
0026835179
-
Static and dynamic behavior of paralleled IGBTs
-
Mar./Apr
-
R. Letor, "Static and dynamic behavior of paralleled IGBTs," IEEE Trans. Ind. Applicat., vol. 28, pp. 395-402, Mar./Apr. 1992.
-
(1992)
IEEE Trans. Ind. Applicat
, vol.28
, pp. 395-402
-
-
Letor, R.1
-
9
-
-
32644434673
-
A comparison of IGBT technologies for use in the series connection
-
Nottingham, U.K
-
P. R. Palmer, A. N. Githiari, and R. J. Leedham, "A comparison of IGBT technologies for use in the series connection," in Proc. PEVD'96 Conf., Nottingham, U.K., 1996, pp. 236-24.
-
(1996)
Proc. PEVD'96 Conf
, pp. 224-236
-
-
Palmer, P.R.1
Githiari, A.N.2
Leedham, R.J.3
-
10
-
-
0030689898
-
Some scaling issues in the active control of IGBT modules for high power applications
-
St. Louis, MO
-
P. R. Palmer, A. N. Githiari, and R. J. Leedham, "Some scaling issues in the active control of IGBT modules for high power applications," in Proc. IEEE PESC'97 Conf., St. Louis, MO, 1997, pp. 854-860.
-
(1997)
Proc. IEEE PESC'97 Conf
, pp. 854-860
-
-
Palmer, P.R.1
Githiari, A.N.2
Leedham, R.J.3
-
11
-
-
0032182614
-
An analysis of the series connection of IGBTs
-
A. N. Githiari and P. R. Palmer, "An analysis of the series connection of IGBTs," Proc. Inst. Elect. Eng., vol. 145, no. 5, pp. 354-360, 1998.
-
(1998)
Proc. Inst. Elect. Eng
, vol.145
, Issue.5
, pp. 354-360
-
-
Githiari, A.N.1
Palmer, P.R.2
-
12
-
-
0034795058
-
Circuit simulator models for the diode and IGBT with full temperature dependent features
-
Vancouver BC, Canada, June
-
P. R. Palmer, P. Y. Eng, J. C. Joyce, J. Hudgins, E. Santi, and R. Dougal, "Circuit simulator models for the diode and IGBT with full temperature dependent features," in Proc. IEEE PESC'01 Conf., Vancouver, BC, Canada, June 2001, pp. 2171-2177.
-
(2001)
Proc. IEEE PESC'01 Conf
, pp. 2171-2177
-
-
Palmer, P.R.1
Eng, P.Y.2
Joyce, J.C.3
Hudgins, J.4
Santi, E.5
Dougal, R.6
-
13
-
-
0033650805
-
The use of capsule IGBTs in the series connection
-
London, U.K
-
P. R. Palmer, H. S. Rajamani, and N. Dutton, "The use of capsule IGBTs in the series connection," in Proc. PEVD'00 Conf., London, U.K., 2000, pp. 250-255.
-
(2000)
Proc. PEVD'00 Conf
, pp. 250-255
-
-
Palmer, P.R.1
Rajamani, H.S.2
Dutton, N.3
-
14
-
-
29144505545
-
An analytical model for the steady state and transient characteristics of the power insulated gate bipolar transistor
-
A. Hefner and D. Blackburn, "An analytical model for the steady state and transient characteristics of the power insulated gate bipolar transistor," Solid State Electron., vol. 31, no. 10, pp. 1513-1532, 1988.
-
(1988)
Solid State Electron
, vol.31
, Issue.10
, pp. 1513-1532
-
-
Hefner, A.1
Blackburn, D.2
-
15
-
-
3843082387
-
Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of fast power diodes
-
Seville, Spain
-
N. Y. A. Shammas, M. T. Rahimo, and P. T. Hoban, "Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of fast power diodes," in Proc. 5th Eur. Power Electronics Conf. (EPE'95), vol. 1, Seville, Spain, 1995, pp. 577-582.
-
(1995)
Proc. 5th Eur. Power Electronics Conf. (EPE'95)
, vol.1
, pp. 577-582
-
-
Shammas, N.Y.A.1
Rahimo, M.T.2
Hoban, P.T.3
-
16
-
-
0034833323
-
6.5 kV modules using IGBTs with field stop technology
-
Osaka, Japan
-
J. G. Bauer, F. Auerbach, A. Porst, R. Roth, H. Ruthing, and O. Schilling, "6.5 kV modules using IGBTs with field stop technology," in Proc. IEEE ISPSD'01 Conf., Osaka, Japan, 2001, pp.
-
(2001)
Proc. IEEE ISPSD'01 Conf
, pp. 121-124
-
-
Bauer, J.G.1
Auerbach, F.2
Porst, A.3
Roth, R.4
Ruthing, H.5
Schilling, O.6
|