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Volumn 19, Issue 4, 2004, Pages 894-901

Active voltage control of IGBTs for high power applications

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED LOOP CONTROL SYSTEMS; SHORT CIRCUIT CURRENTS; SWITCHING CIRCUITS; VOLTAGE CONTROL; WAVEFORM ANALYSIS;

EID: 3843094960     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2004.830078     Document Type: Article
Times cited : (121)

References (16)
  • 1
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    • (1991) IEEE Trans. Power Electron , vol.6 , pp. 208-219
    • Hefner, A.1
  • 4
    • 84937415652 scopus 로고
    • The series connection of IGBTs with optimized voltage sharing in the switching transisent
    • Atlanta, GA
    • P. R. Palmer and A. N. Githiari, "The series connection of IGBTs with optimized voltage sharing in the switching transisent," in Proc. IEEE PESC'95 Conf., Atlanta, GA, 1995, pp. 44-50.
    • (1995) Proc. IEEE PESC'95 Conf , pp. 44-50
    • Palmer, P.R.1    Githiari, A.N.2
  • 5
    • 0007087395 scopus 로고
    • High power IGBT converters with new gate drive and protection circuit
    • Seville, Spain
    • S. Gediga, R. Marquardt, and R. Sommer, "High power IGBT converters with new gate drive and protection circuit," in Proc. 5th Eur. Power Electronics Conf. (EPE'95), vol. 1, Seville, Spain, 1995, pp. 66-70.
    • (1995) Proc. 5th Eur. Power Electronics Conf. (EPE'95) , vol.1 , pp. 66-70
    • Gediga, R.1    Marquardt, R.2    Sommer, R.3
  • 7
    • 0021452819 scopus 로고
    • An analysis and experimental verification of parasitic oscillations in paralled power MOSFETs
    • July
    • J. Kassakian and D. Lau, "An analysis and experimental verification of parasitic oscillations in paralled power MOSFETs," IEEE Trans. Electron. Devices, vol. 31, pp. 959-963, July 1984.
    • (1984) IEEE Trans. Electron. Devices , vol.31 , pp. 959-963
    • Kassakian, J.1    Lau, D.2
  • 8
    • 0026835179 scopus 로고
    • Static and dynamic behavior of paralleled IGBTs
    • Mar./Apr
    • R. Letor, "Static and dynamic behavior of paralleled IGBTs," IEEE Trans. Ind. Applicat., vol. 28, pp. 395-402, Mar./Apr. 1992.
    • (1992) IEEE Trans. Ind. Applicat , vol.28 , pp. 395-402
    • Letor, R.1
  • 9
    • 32644434673 scopus 로고    scopus 로고
    • A comparison of IGBT technologies for use in the series connection
    • Nottingham, U.K
    • P. R. Palmer, A. N. Githiari, and R. J. Leedham, "A comparison of IGBT technologies for use in the series connection," in Proc. PEVD'96 Conf., Nottingham, U.K., 1996, pp. 236-24.
    • (1996) Proc. PEVD'96 Conf , pp. 224-236
    • Palmer, P.R.1    Githiari, A.N.2    Leedham, R.J.3
  • 10
    • 0030689898 scopus 로고    scopus 로고
    • Some scaling issues in the active control of IGBT modules for high power applications
    • St. Louis, MO
    • P. R. Palmer, A. N. Githiari, and R. J. Leedham, "Some scaling issues in the active control of IGBT modules for high power applications," in Proc. IEEE PESC'97 Conf., St. Louis, MO, 1997, pp. 854-860.
    • (1997) Proc. IEEE PESC'97 Conf , pp. 854-860
    • Palmer, P.R.1    Githiari, A.N.2    Leedham, R.J.3
  • 11
    • 0032182614 scopus 로고    scopus 로고
    • An analysis of the series connection of IGBTs
    • A. N. Githiari and P. R. Palmer, "An analysis of the series connection of IGBTs," Proc. Inst. Elect. Eng., vol. 145, no. 5, pp. 354-360, 1998.
    • (1998) Proc. Inst. Elect. Eng , vol.145 , Issue.5 , pp. 354-360
    • Githiari, A.N.1    Palmer, P.R.2
  • 12
    • 0034795058 scopus 로고    scopus 로고
    • Circuit simulator models for the diode and IGBT with full temperature dependent features
    • Vancouver BC, Canada, June
    • P. R. Palmer, P. Y. Eng, J. C. Joyce, J. Hudgins, E. Santi, and R. Dougal, "Circuit simulator models for the diode and IGBT with full temperature dependent features," in Proc. IEEE PESC'01 Conf., Vancouver, BC, Canada, June 2001, pp. 2171-2177.
    • (2001) Proc. IEEE PESC'01 Conf , pp. 2171-2177
    • Palmer, P.R.1    Eng, P.Y.2    Joyce, J.C.3    Hudgins, J.4    Santi, E.5    Dougal, R.6
  • 13
    • 0033650805 scopus 로고    scopus 로고
    • The use of capsule IGBTs in the series connection
    • London, U.K
    • P. R. Palmer, H. S. Rajamani, and N. Dutton, "The use of capsule IGBTs in the series connection," in Proc. PEVD'00 Conf., London, U.K., 2000, pp. 250-255.
    • (2000) Proc. PEVD'00 Conf , pp. 250-255
    • Palmer, P.R.1    Rajamani, H.S.2    Dutton, N.3
  • 14
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    • An analytical model for the steady state and transient characteristics of the power insulated gate bipolar transistor
    • A. Hefner and D. Blackburn, "An analytical model for the steady state and transient characteristics of the power insulated gate bipolar transistor," Solid State Electron., vol. 31, no. 10, pp. 1513-1532, 1988.
    • (1988) Solid State Electron , vol.31 , Issue.10 , pp. 1513-1532
    • Hefner, A.1    Blackburn, D.2
  • 15
    • 3843082387 scopus 로고
    • Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of fast power diodes
    • Seville, Spain
    • N. Y. A. Shammas, M. T. Rahimo, and P. T. Hoban, "Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of fast power diodes," in Proc. 5th Eur. Power Electronics Conf. (EPE'95), vol. 1, Seville, Spain, 1995, pp. 577-582.
    • (1995) Proc. 5th Eur. Power Electronics Conf. (EPE'95) , vol.1 , pp. 577-582
    • Shammas, N.Y.A.1    Rahimo, M.T.2    Hoban, P.T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.