Considerations for a digital gate unit in high power applications

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2008, Pages 2784-2790

  Kuhn, H ^a   Koneke T ^a   Mertens, A ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE;

CHARGING PROCESSES; FIXED CURRENT; FIXED PARAMETERS; GATE CURRENTS; HIGH-POWER APPLICATIONS; INPUT CAPACITANCE; SWITCHING TRANSIENTS; VOLTAGE SOURCES;

POWER ELECTRONICS;

EID: 52349116073     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2008.4592367     Document Type: Conference Paper

References (12)

1. S.; Krug D.; Dieckerhoff, S.; Bernet. Power loss-oriented evaluation of high voltage IGBTs and multilevel converters in transformerless traction applications. Power Electronics, IEEE Transactions on, 20:1328-1336, Nov. 2005.
2. R. Redl. Power electronics and electromagnetic compatibility. In Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE, volume 1, pages 15-21vol.1, 23-27 June 1996.
3. R. Redl. Electromagnetic environmental impact of power electronics equipment. In Proceedings of the IEEE, volume 89, pages 926-938, June 2001.
4. R. Chokhawala, J. Catt, and B. Pelly. Gate drive considerations for IGBT modules. In Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE, pages 1186-1195vol.1, 4-9 Oct. 1992.
5. Jan Thalheim. Control Strategies for Balancing of Series and Parallel Connected IGBT/Diode Modules. PhD thesis, ETH Zürich, 2003.
6. IXYS. Technical Information High Voltage IGBT with Diode IXGH20N120BD1 VCES = 1200 V IC25 = 40 A.
7. B. Weis and M. Bruckmann. A new gate driver circuit for improved turn-off characteristics of high current igbt modules. In Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE, volume 2, pages 1073-1077 vol.2, 12-15 Oct. 1998.
8. Satoki Takizawa; Seiki Igarashi; Kazuo Kuroki. A novel gate drive circuit for low-loss system using igbt satiration voltage characteristics. In International Symposium on Power Semiconductor Devices & ICs, 2001, Conference Proceedings Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual, 2001.
9. Nadir Idir; Robert Bausiére; Jean Jaquaes Franchaud. Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors. Power Electronics, IEEE Transactions on, 21(4):849-855, July 2006.
10. Taoufik Abdelhedi. Maβnahmen zur Verbesserung der Schalt- eigenschaften von Insulated-Gate-Bipolar-Tansistoren. PhD thesis, Universität-GH Wuppertal, 1994.
11. V. John, Bum-Seok Suh, and T.A. Lipo. High performance active gate drive for high power IGBTs. In Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE, volume 2, pages 1519-1529vol.2, 12-15 Oct. 1998.
12. P.R.; Lim T.C.; Finney S.J.; Bryant A.T.; Wang, Y.; Palmer. Real-time optimization of igbt/diode cell switching under active voltage control. In Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE, volume 22, pages 374-383, March.