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Volumn , Issue , 2008, Pages 1458-1464

Potential of digital gate units in high power appliations

Author keywords

IGBT; Power semiconductor devices; Signal processing

Indexed keywords

ACTIVE FILTERS; DIGITAL ARITHMETIC; ELECTRIC CONDUCTIVITY; MOTION CONTROL; MOTION PLANNING; PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SIGNAL PROCESSING;

EID: 56449130091     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEPEMC.2008.4635473     Document Type: Conference Paper
Times cited : (16)

References (9)
  • 2
    • 56449113003 scopus 로고    scopus 로고
    • Lastwechselfestigkeit von modernen Aufbau- und Verbindungstechniken bei hohen Temperaturhüben,
    • PhD Thesis, Chemnitz University of Technology
    • R. Amro, "Lastwechselfestigkeit von modernen Aufbau- und Verbindungstechniken bei hohen Temperaturhüben," PhD Thesis, Chemnitz University of Technology, 2006.
    • (2006)
    • Amro, R.1
  • 3
    • 84874140692 scopus 로고    scopus 로고
    • Method for Electrical Detection of end-off-life Failures in Power Semiconductors
    • J. Lehmann, M. Netzel, R. Hezer, S. Pawel, and Th. Doll "Method for Electrical Detection of end-off-life Failures in Power Semiconductors," EPE Conference, 2003.
    • (2003) EPE Conference
    • Lehmann, J.1    Netzel, M.2    Hezer, R.3    Pawel, S.4    Doll, T.5
  • 4
    • 34548751214 scopus 로고    scopus 로고
    • Measuerement of the transient junction temperature in MOSFET devices under operating conditions
    • D. Barlini, M. Ciappa, M. Mermet-Guyennet, and W. Fichtner, "Measuerement of the transient junction temperature in MOSFET devices under operating conditions," Microelectronics Reliability, vol. 47, pp. 1707-1712, 2007.
    • (2007) Microelectronics Reliability , vol.47 , pp. 1707-1712
    • Barlini, D.1    Ciappa, M.2    Mermet-Guyennet, M.3    Fichtner, W.4
  • 5
    • 33748040759 scopus 로고    scopus 로고
    • New Technique for the Measurement of the Static and of the Transient Junction Temperature in IGBT Devices under Operating Conditions
    • D. Barlini, M. Ciappa, A. Castellazi, M. Mermet-Guyennet, and W. Fichtner, "New Technique for the Measurement of the Static and of the Transient Junction Temperature in IGBT Devices under Operating Conditions," Microelectronics Reliability, vol. 46, pp. 1772-1777, 2007.
    • (2007) Microelectronics Reliability , vol.46 , pp. 1772-1777
    • Barlini, D.1    Ciappa, M.2    Castellazi, A.3    Mermet-Guyennet, M.4    Fichtner, W.5
  • 9
    • 33746876661 scopus 로고    scopus 로고
    • Active Gate Voltage Control of Turn-on di/dt and Turn-off dv/dt in Insulated Gate Tranistors
    • N. Idir, R. Bausire, and J.J. Franchaud, "Active Gate Voltage Control of Turn-on di/dt and Turn-off dv/dt in Insulated Gate Tranistors," IEEE Transactions on Power Electronics, vol.2, no. 4, 2006.
    • (2006) IEEE Transactions on Power Electronics , vol.2 , Issue.4
    • Idir, N.1    Bausire, R.2    Franchaud, J.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.