P-type doping of GaAs nanowires using carbon

Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

  Salehzadeh, O ^a   Zhang, X ^a   Gates, B D ^a   Kavanagh, K L ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

APPARENT RESISTIVITY; AU CATALYSTS; AU ELECTRODES; C-DOPED; CARBON PRECURSORS; CURRENT TRANSPORT MECHANISM; DOPING LEVELS; GAAS; GASPHASE; GENERATION-RECOMBINATION; GROUP III; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLAR FLOWS; NEGATIVE BIAS; P-TYPE CONDUCTIVITY; P-TYPE DOPING; PRECURSOR RATIOS; SCANNING ELECTRON MICROSCOPE; TRANSPORT MEASUREMENTS;

CARBON; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TUNGSTEN;

NANOWIRES;

EID: 84870880678     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759368     Document Type: Article

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