Dicarbon defects in carbon-doped GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 3, 2003, Pages

  Tan, K H ^a   Yoon, S F ^a   Huang, Q F ^a   Zhang, R ^a   Sun, Z Z ^a   Jiang, J ^b   Feng, W ^b   Lee, L H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MBE Technology Pte Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CARBON; GALLIUM;

ARTICLE; CALCULATION; HIGH TEMPERATURE; MASS SPECTROMETRY; MEASUREMENT; X RAY DIFFRACTION;

EID: 0037437830     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.035208     Document Type: Article

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