Effect of carbon tetrabromide on the morphology of GaAs nanowires

Nanotechnology

Volumn 22, Issue 16, 2011, Pages

  Salehzadeh, O ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL GROWTH; CARBON TETRABROMIDE; CBR; GAAS; HIGH DENSITY; II-IV SEMICONDUCTORS; LATERAL GROWTH; LOW GROWTH TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; P-TYPE DOPANT; PRECURSOR CHEMISTRY; RADIAL GROWTH; STRIKING EFFECTS; TRIETHYLGALLIUM; TRIMETHYL GALLIUM; ZINCBLENDE STRUCTURES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH RATE; MORPHOLOGY; NANOWIRES; SEMICONDUCTING GALLIUM; STACKING FAULTS; VAPORS;

SEMICONDUCTOR GROWTH;

BROMINATED HYDROCARBON; CARBON TETRABROMIDE; GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; MACROMOLECULE; MATERIALS TESTING; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; GALLIUM; HYDROCARBONS, BROMINATED; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 79952667409     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/16/165603     Document Type: Article

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