High temperature characteristics of AlGaN/GaN high electron mobility transistors

Chinese Physics B

Volumn 20, Issue 11, 2011, Pages

  Yang, Li Yuan ^a   Hao, Yue ^a   Ma, Xiao Hua ^a   Zhang, Jin Cheng ^a   Pan, Cai Yuan ^a   Ma, Ji Gang ^a   Zhang, Kai ^a   Ma, Ping ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN high electron mobility transistor; current collapse; high temperature characteristics; traps

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; CURRENT COLLAPSE; DC CHARACTERISTICS; DEGRADATION MECHANISM; DIRECT CURRENT; GATE LEAKAGES; HIGH TEMPERATURE; HIGH TEMPERATURE CHARACTERISTICS; HIGHER TEMPERATURES; PULSED MEASUREMENTS; TEMPERATURE INCREASE; TEMPERATURE RANGE; TRAP ASSISTED TUNNELING; TRAPS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; ELECTRON TUNNELING; ELECTRONS; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 82155186024     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/11/117302     Document Type: Article

References (9)

1. Daumiller I, Kirchner C, Kamp M, Ebeling K J and Kohn E 1999 IEEE Electron Device Lett. 20 448
2. Neudeck P G, Okojie R S and Chen L Y 2002 Proc. IEEE 90 1065
3. Lin F, Shen B, Lu L W, Ma N, Xu F J, Miao Z L, Song J, Liu X Y, Wei K and Huang J 2010 Chin. Phys. B 19 127304
4. Chang Y C, Zhang Y M and Zhang Y M 2006 Chin. Phys. 15 636
5. Zhang A P, Dang G, Ren F, Han J, Polyakov A Y, Smirnov N B, Govorkov A V, Redwing J M, Cho H and Pearton J 2000 Appl. Phys. Lett. 76 3816
6. Miller E J, Yua E T, Waltereit P and Speck J S 2004 Appl. Phys. Lett. 84 535
7. Sathaiya D M and Karmalkar S 2007 IEEE Trans. Electron Device 54 2614
8. Smith KV, Yu E T, Redwing J M and Boutros K S 2000 J. Electron. Mater. 29 274
9. Stoklas R, Gregusova D, Novak J, Vescan A and Kordos P 2008 Appl. Phys. Lett. 93 124103