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Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

Universal scaling of resistivity in bilayer graphene

(3) Gopinadhan, Kalon a Jun Shin, Young a Yang, Hyunsoo a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRICAL RESISTIVITY; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON HOLE; EMPIRICAL FORMULAS; GRAPHENE DEVICES; INHOMOGENEITIES; SCALING PARAMETER; SINGLE ELECTRON TUNNELING; TEMPERATURE DEPENDENT; UNIVERSAL CURVE; UNIVERSAL SCALING;

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84870544018 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4769042 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.