From the kondo regime to the mixed-valence regime in a single-electron transistor

Physical Review Letters

Volumn 81, Issue 23, 1998, Pages 5225-5228

  Goldhaber Gordon, D ^a,b   Gores J ^a   Kastner, M A ^a   Shtrikman, Hadas ^b   Mahalu, D ^b   Meirav, U ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243522360     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.5225     Document Type: Article

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