The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure

Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

  Chen, Yu Chun ^a   Chang, Ting Chang ^a,b   Li, Hung Wei ^c   Hsieh, Tien Yu ^a   Chen, Te Chih ^a   Wu, Chang Pei ^a   Chou, Cheng Hsu ^d   Chung, Wang Cheng ^d   Chang, Jung Fang ^d   Tai, Ya Hsiang ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d InnoLux Display Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL INTERFACE; DISPERSIVE DISTRIBUTION; ELECTRICAL RELIABILITY; FRINGE FIELDS; HOLE TRAPPING; IN-GA-ZN-O; NEGATIVE BIAS; NEGATIVE GATE; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS; THIN FILMS; ZINC;

GALLIUM;

EID: 84870514084     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767996     Document Type: Article

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