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Japanese Journal of Applied Physics

Volumn 51, Issue 3 PART 2, 2012, Pages

Effect of channel length on the reliability of amorphous indium-gallium-zinc oxide thin film transistors

(6) Lee, Soo Yeon a Kim, Sun Jae a Lee, Young Wook a Lee, Woo Geun b Yoon, Kap Soo b Han, Min Koo a

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; NEGATIVE BIAS; NEGATIVE GATE; OXIDE THIN FILMS; POSITIVE BIAS; POSITIVE GATE BIAS; SOURCE/DRAIN ELECTRODES; THIN-FILM TRANSISTOR (TFTS);

ELECTRON TRAPS; GALLIUM; INDIUM; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84858953451 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.03CB03 Document Type: Article

Times cited : (4)

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