HVIGBT physical model analysis during transient

IEEE Transactions on Power Electronics

Volumn 28, Issue 5, 2013, Pages 2616-2624

  Ji, Shiqi ^a   Zhao, Zhengming ^a   Lu, Ting ^a   Yuan, Liqiang ^a   Yu, Hualong ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Carrier lifetime; high voltage IGBT (HVIGBT); model; transient

Indexed keywords

BUCK CONVERTERS; BUS VOLTAGE; EXTERNAL CHARACTERISTIC; HIGH-VOLTAGE IGBT; KEY PARAMETERS; LOAD CURRENTS; LOW-VOLTAGE; PHYSICAL MODEL; TRANSIENT MODEL;

EXPERIMENTS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MODELS; TRANSIENTS;

CARRIER LIFETIME;

EID: 84870420033     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2218620     Document Type: Article

References (22)

1. K. Sheng, B. W. Williams, and S. J. Finney, "A review of IGBT models," IEEE Trans. Power Electron., vol. 15, no. 6, pp. 1250-1266, Nov. 2000. (Pubitemid 33776365)
2. A. R. Hefner Jr., "Analytical modeling of device-circuit interaction for the power insulated gate bipolar transistor (IGBT)," IEEE Trans. Ind. Appl., vol. 26, no. 6, pp. 995-1005, Nov./Dec. 1990.
3. A. R. Hefner Jr., "An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)," IEEE Trans. Power Electron., vol. 6, no. 2, pp. 208-219, Apr. 1991.
4. A. R. Hefner Jr., "An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)," IEEE Trans. Power Electron., vol. 5, no. 4, pp. 459-468, Oct. 1990.
5. A. R. Hefner Jr. and Daniel M. Diebolt, "An experimentally verified IGBT model implemented in the saber circuit simulator," IEEE Trans. Power Electron., vol. 9, no. 5, pp. 532-542, Sep. 1994.
6. A. R. Hefner Jr., "Modeling buffer layer IGBT's for circuit simulation," in Proc. Power Electron. Spec. Conf., 1993, pp. 60-70.
7. K. Sheng, S. J. Finney, andB. W.Williams, "A newanalytical IGBT model with improved electrical characteristics," IEEE Trans. Power Electron., vol. 14, no. 1, pp. 98-107, Jan. 1999.
8. R. Kraus and H. J. Mattausch, "Status and trends of power semiconductor device models for circuit simulation," IEEE Trans. Power Electron., vol. 13, no. 3, pp. 452-465, May 1998. (Pubitemid 128749974)
9. A. T. Bryant, X. Kang, E. Santi, P. R. Palmer, and J. L. Hudgins, "Twostep parameter extraction procedure with formal optimization for physicsbased circuit simulator IGBT and p-i-n diode models," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 295-309, Mar. 2006. (Pubitemid 43380078)
10. A. T. Bryant, L. Lu, E. Santi, P. R. Palmer, and J. L. Hudgins, "Physical modeling of fast p-i-n diodes with carrier lifetime zoning - Part I: Device model," IEEE Trans. Power Electron., vol. 23, no. 1, pp. 189-197, Jan. 2008.
11. L. Lu, A. Bryant, J. L. Hudgins, P. R. Palmer, and E. Santi, "Physics-based model of planar-gate IGBT including MOS side two-dimensional effects," IEEE Trans. Power Electron., vol. 46, no. 6, pp. 2556-2567, Nov. 2010.
12. T. Yong, C. Ming, and W. Bo, "New methods for extracting field-stop IGBT model parameters by electrical measurements," Proc. IEEE Int. Symp. Ind. Electron., pp. 1546-1551, Jul. 2009.
13. A. T. Bryant, Y. Wang, S. J. Finney, T. C. Lim, and P. R. Palmer, "Numerical optimization of an active voltage controller for high-power IGBT converters," IEEE Trans. Power Electron., vol. 22, no. 2, pp. 374-383, Mar. 2007. (Pubitemid 46523160)
14. A. Ramamurthy and S. Sawant, "Modeling the dv/dt of the IGBT during inductive turn off," IEEE Trans. Power Electron., vol. 14, no. 4, pp. 601- 606, Jul. 1999.
15. A. Bryant, S. Yang, P. Mawby, D. Xiang, L. Ran, P. Tavner, and P. R. Palmer, "Investigation into IGBT dv/dt during turn-off and its temperature dependence," IEEE Trans. Power Electron., vol. 26, no. 10, pp. 3019- 3031, Oct. 2011.
16. P. Ranstad and H.-P. Nee, "On dynamic effects influencing IGBT losses in soft-switching converters," IEEE Trans. Power Electron., vol. 26, no. 1, pp. 260-271, Jan. 2011.
17. X. Kang, A. Caiafa, E. Santi, J. L. Hudgins, and P. R. Palmer, "Characterization and modeling of high-voltage field-stop IGBTs," IEEE Trans. Ind. Appl., vol. 39, no. 4, pp. 922-928, Jul./Aug. 2003.
18. H. Goebel, "Unified method for modeling semiconductor power devices," IEEE Trans. Power Electron., vol. 9, no. 9, pp. 497-505, Sep. 1994.
19. H. Hagino, J. Yamashita, A. Uenishi, and H. Haruguchi, "An experimental and numerical study on the forward biased SOA of IGBT's," IEEE Trans. Electron Devices, vol. 43, no. 3, pp. 490-499, Mar. 1996.
20. D. A. Neamen, Semiconductor Physics and Devices. New York: Wiley- Interscience, 2006.
21. O. Muhlfeld and F. W. Fuchs, "Optimization of the stray inductance in three-phase MOSFET power modules aided by means of PEEC simulation," in Proc. Power Electron. Appl., Sep. 2009, pp. 1-7.
22. C. L. Ma and P. O. Lauritzen, "A simple power diode model with forward and reverse recovery," IEEE Trans. Power Electron., vol. 8, no. 4, pp. 342- 346, Oct. 1993.