Optimal size regime for oxidation-resistant silicon quantum dots

ACS Nano

Volumn 6, Issue 11, 2012, Pages 9690-9699

  Li, Huashan ^a   Lusk, Mark T ^a   Collins, Reuben T ^a   Wu, Zhigang ^a  

^a Department of Metallurgical and Materials Engineering   (United States)

Author keywords

optical absorption; oxidation; passivation; photovoltaics; Si quantum dot; transition state

Indexed keywords

EXCITON TRANSPORT; MANY BODY PERTURBATION THEORY; OPTICAL AND ELECTRONIC PROPERTIES; OPTIMAL SIZE; OXIDATION RESISTANT; OXYGEN INCORPORATION; PHOTOVOLTAICS; QUANTUM DOT ASSEMBLIES; SI QUANTUM DOT; SILICON QUANTUM DOTS; TRANSITION STATE;

ELECTRONIC PROPERTIES; LIGHT ABSORPTION; OXIDATION; OXYGEN; PASSIVATION; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; OXIDATION REDUCTION REACTION; PARTICLE SIZE;

COMPUTER SIMULATION; MODELS, CHEMICAL; OXIDATION-REDUCTION; PARTICLE SIZE; QUANTUM DOTS; SILICON;

EID: 84870396622     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn303109t     Document Type: Article

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