Identification of ultra-fast electronic and thermal processes during femtosecond laser ablation of Si

Applied Physics A: Materials Science and Processing

Volumn 109, Issue 2, 2012, Pages 421-429

  Bashir, Shazia ^a,b   Shahid Rafique, M ^a,c   Husinsky, Wolfgang ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b GC UNIVERSITY   (Pakistan)

^c UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION THRESHOLDS; AMBIENT CONDITIONS; COULOMB EXPLOSION; ELECTRONIC PROCESS; ENERGY DEPOSITION MECHANISM; FAST ELECTRONICS; FLUENCES; IRRADIATED SAMPLES; LASER FLUENCES; SCATTERING TECHNIQUES; SI SURFACES; SINGLE-SHOT; STRONG ENHANCEMENT; THERMAL PROCESS; TI: SAPPHIRE LASER; TIME-SCALES; ULTRA-FAST;

ATOMIC FORCE MICROSCOPY; DIELECTRIC DEVICES; IRRADIATION; LASER ABLATION; LASERS; MELTING; RAMAN SPECTROSCOPY; SILICON; SURFACE TOPOGRAPHY;

ULTRASHORT PULSES;

EID: 84870239137     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-7067-3     Document Type: Article

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